Abstract:WO 3 -doping significantly enhances the optical and electrochemical properties of Nb 2 O 5 thin films, making them ideal for optoelectronic applications. This study investigates WO 3 -doped Nb 2 O 5 thin films deposited via reactive co-sputtering of niobium and tungsten metal targets at room temperature. WO 3 concentration was controlled by adjusting the power to the tungsten target. The microstructure, surface morphology, optical, and electrochemical properties of the deposited films were analyzed. X-ray diffraction revealed that the films are polycrystalline, with improved crystallinity as WO 3 content increased. Higher doping reduced microstrain and increased grain size. X-ray photoelectron spectroscopy confirmed chemical composition and doping levels. Atomic force microscopy showed uniform surface morphology in pristine films, with increased surface roughness at higher WO 3 concentrations. The optical parameters of the thin films were evaluated by measuring their transmittance and reflectance spectra across a wavelength range of 300 to 800 nm. Optical analysis revealed reduced transmittance and reflectance but higher absorption at a 41% WO 3 concentration. The absorption coefficient exhibits a redshift in the absorption edge accompanied by a reduction in the energy band gap from 3.75 eV to 3.10 eV as the doping concentration increases. The film with 41% WO 3 demonstrated high absorption, low transmittance, and enhanced optical and electrical conductivity. This balance between high conductivity and low transmittance ensures that WO 3 doped Nb 2 O 5 thin films can be a suitable material for sensor and solar cell applications. Cyclic voltammetry measurements showed the impact of WO 3 doping on cathode current density and total charge density. Remarkably, the best performance was observed for the 41% WO 3 doped thin film. Overall, WO 3 doping strongly influences the optical and electrochemical properties, indicating that a specific concentration of WO 3 in WO 3 -Nb 2 O 5 mixed oxide thin films holds great potential for electrochromic devices, while also being suitable for use in sensors and solar cells.

Stoichiometry modulated tunable optoelectronic properties of Nb-doped WS2 synthesized by chemical vapor deposition method

Transition-Metal Substitution-Induced Lattice Strain and Electrical Polarity Reversal in Monolayer WS2.

Modulating Electronic Structure of Monolayer Transition Metal Dichalcogenides by Substitutional Nb‐Doping

Fabrication and Optical Performance of Mo1-xWxS2 Monolayer with Different Composition Ranges Via One-Step Chemical Vapor Deposition Approach

Effect of niobium doping on excitonic dynamics in MoSe 2

Tuning Optical and Electrochemical Properties of Nb2O5 Thin Films via WO3 Doping

Understanding Dopant–Host Interactions on Electronic Structures and Optical Properties in Ce‐Doped WS2 Monolayers

Niobium and rhenium doping in MoSe2 monolayer during molecular beam epitaxy: Shallow dopants and defect proliferation

Effect of transition metal doping on the photoelectric effect of monolayer NbS2 under strain: First-principles calculations

Anisotropic Infrared Response and Orientation-Dependent Strain-Tuning of the Electronic Structure in Nb2SiTe4.

Wafer-Scale Synthesis of WS2 Films with in Situ Controllable P-Type Doping by Atomic Layer Deposition

Substantially Enhanced Properties of 2D WS2 by High Concentration of Erbium Doping Against Tungsten Vacancy Formation

Effect of transition metal doping on the photoelectric structure of single layer NbS2 under defects

High Photoresponse Detectors Based on Yb-Doped Monolayer Ws2 Nanosheets

Chemical Vapor Deposition of Er-Doped WS2 Flakes with Near-Infrared Emission and Enhanced Near-Infrared Photoresponse

Wafer-Scale Synthesis of WS 2 Films with In Situ Controllable p-Type Doping by Atomic Layer Deposition

Modulated Wafer-Scale WS2 Films Based on Atomic-Layer-deposition for Various Device Applications.

High photoresponse detectors based on Yb-doped monolayer WS 2 nanosheets

Niobium doping of CVD-WS 2 monolayers using solid precursors with and without salt-KBr as a catalyst: A comparative study

Wafer-scale synthesis of monolayer WS 2 for high-performance flexible photodetectors by enhanced chemical vapor deposition

Direct Visualization and Manipulation of Tunable Quantum Well State in Semiconducting Nb 2 SiTe 4