Abstract:Successful doping of single-layer transition metal dichalcogenides (TMDs) remains a formidable barrier to their incorporation into a range of technologies. We use density functional theory to study doping of molybdenum and tungsten dichalcogenides with a large fraction of the periodic table. An automated analysis of the energetics, atomic and electronic structure of thousands of calculations results in insightful trends across the periodic table and points out promising dopants to be pursued experimentally. Beyond previously studied cases, our predictions suggest promising substitutional dopants that result in p-type transport and reveal interesting physics behind the substitution of the metal site. Doping with early transition metals (TMs) leads to tensile strain and a significant reduction in the bandgap. The bandgap increases and strain is reduced as the d-states are filled into the mid TMs; these trends reverse as we move into the late TMs. Additionally, the Fermi energy increases monotonously as the d-shell is filled from the early to mid TMs and we observe few to no gap states, indicating the possibility of both p- (early TMs) and n- (mid TMs) type doping. Quite surprisingly, the simulations indicate the possibility of interstitial doping of TMDs; the energetics reveal that a significant number of dopants, increasing in number from molybdenum disulfide to diselenide and to ditelluride, favor the interstitial sites over adsorbed ones. Furthermore, calculations of the activation energy associated with capturing the dopants into the interstitial site indicate that the process is kinetically possible. This suggests that interstitial impurities in TMDs are more common than thought to date and we propose a series of potential interstitial dopants for TMDs relevant for application in nanoelectronics based on a detailed analysis of the predicted electronic structures.

Modulating Electronic Structure of Monolayer Transition Metal Dichalcogenides by Substitutional Nb‐Doping

Space-confined and Substrate-Directed Synthesis of Transition-Metal Dichalcogenide Nanostructures with Tunable Dimensionality.

Niobium and rhenium doping in MoSe2 monolayer during molecular beam epitaxy: Shallow dopants and defect proliferation

Synthesis and Transport Properties of Degenerate P-Type Nb-Doped WS2 Monolayers

Novel doping alternatives for single-layer transition metal dichalcogenides

Transition-Metal Substitution-Induced Lattice Strain and Electrical Polarity Reversal in Monolayer WS2.

Doping against the native propensity of MoS2: degenerate hole doping by cation substitution.

Controlled Synthesis and Accurate Doping of Wafer‐Scale Two‐Dimensional Semiconducting Transition Metal Dichalcogenides

Electronic and Optical Characteristics of 5D-Transition Metal Doped 2D-Nbse2 Monolayer for Nanoelectronic Device Applications: an Ab-Initio-analysis

Growth of Nb-Doped Monolayer WS2 by Liquid-Phase Precursor Mixing

Controlled Synthesis and Accurate Doping of Wafer-Scale 2D Semiconducting Transition Metal Dichalcogenides.

Patterning and doping of Transition Metals in Tungsten Dichalcogenides

High-Concentration Niobium-Substituted WS2 Basal Domains with Reconfigured Electronics Band Structure for Hydrogen Evolution Reaction.

Substitutional p-Type Doping in NbS2 -MoS2 Lateral Heterostructures Grown by MOCVD

Reconfiguring Crystal and Electronic Structures of MoS2 by Substitutional Doping

Controllable Doping of Transition‐Metal Dichalcogenides by Organic Solvents

Stability, efficiency, and mechanism of n-type doping by hydrogen adatoms in two-dimensional transition metal dichalcogenides

Concentration Phase Separation of Substitution‐Doped Atoms in TMDCs Monolayer

High-Concentration Niobium-Substituted WS2 Basal Domains with Reconfigured Electronic Band Structure for Hydrogen Evolution Reaction.

Understanding Iron-Doping Modulating Domain Orientation and Improving the Device Performance of Monolayer Molybdenum Disulfide

Opposite Doping Distribution in TMD Monolayer Regulated by VLS and VSS Growth Mechanism