2 Μm Actively Mode-Locked External-Cavity Semiconductor Laser

Weiqi Jiang,Jiarong Qin,Yi Shi,Shining Zhu,Fengqiu Wang

DOI: https://doi.org/10.1364/cleo_si.2020.sth3e.3

2020-01-01

Abstract:We have for the first time demonstrated a 450 MHz actively mode-locked external-cavity semiconductor laser at 2 μm. The system can be tuned from 1870-1980 nm, which makes the laser a wavelength-agile pulsed source.

What problem does this paper attempt to address?

Microlaser based on a hybrid structure of a semiconductor nanowire and a silica microdisk cavity.

Guanzhong Wang,Xiaoshun Jiang,Mingxiao Zhao,Yaoguang Ma,Huibo Fan,Qing Yang,Limin Tong,Min Xiao

DOI: https://doi.org/10.1364/OE.20.029472

IF: 3.8

2012-01-01

Optics Express

Abstract:We experimentally demonstrate a hybrid structure microlaser on chip with a single CdSe nanowire attached to a high-Q silica microdisk cavity at room temperature. When pumped by a 532 nm pulse laser, both single-longitudinal mode and multi-longitudinal mode lasers with linewidth of 0.18 nm are obtained from the hybrid structure with a 58-mu m-diameter microdisk and a 250-nm diameter nanowire. The measured lasing threshold of the microlaser is as low as 100 mu J/cm(2). (C) 2012 Optical Society of America
15 GHz Actively Mode-Locked Fiber Laser at 2 Micron

Jiarong Qin,Ruihong Dai,Yafei Meng,Wenbin Gao,Yongbing Xu,Yao Li,Shining Zhu,Fengqiu Wang

DOI: https://doi.org/10.1364/cleo_si.2018.sth4k.7

2018-01-01

Abstract:We demonstrate a 15-GHz actively-mode-locked thulium fiber laser. The repetition-rate is improved by one order of magnitude compared with existing results and such a source can be used for 2 mu m optical data-communication and processing.
Widely Wavelength Switchable V-Coupled-Cavity Semiconductor Laser With Similar To 40 Db Side-Mode Suppression Ratio

Jialiang Jin,Lei Wang,Tingting Yu,Yin Wang,Jian-Jun He

DOI: https://doi.org/10.1364/OL.36.004230

IF: 3.6

2011-01-01

Optics Letters

Abstract:We report the first experimental demonstration of a single-electrode-controlled digitally wavelength switchable V-coupled-cavity laser with high side-mode-suppression-ratio (SMSR) in the 40 dB range. Sixteen-channel and twenty-six channel wavelength switchable lasers with 100 GHz spacing are demonstrated with the maximal SMSR of 40 dB and 37 dB, respectively. They do not require complex gratings, multiple epitaxial growths, or complex tuning algorithms. The device size is only 500 mu m x 300 mu m. Such a simple, compact, and high-performance laser has great potential as a low-cost alternative to existing complex tunable lasers for wide deployment in optical networks and beyond. (C) 2011 Optical Society of America
Single-Electrode-Controlled 26x100ghz Wavelength Switching in V-Coupled-Cavity Semiconductor Laser

Lei Wang,Jialiang Jin,Jian-Jun He

2011-01-01

Abstract:We report our latest experimental results on a simple and compact wavelength switchable V-coupled cavity semiconductor laser. Discrete wavelength switching of 26 channels with 100GHz spacing is achieved with a side-mode-suppression-ratio of about 37 dB, using a single-electrode control. It is shown that the wavelength channels can be switched in opposite directions with different consecutively switchable ranges by tuning the long or short cavity.
1650-nm-band Tunable V-Cavity Semiconductor Laser

Haoyu Deng,Yuan Zhuang,Jian-Jun He

DOI: https://doi.org/10.1364/acpc.2015.asu3b.4

2015-01-01

Abstract:We present a 1650-nm-band wavelength tunable V-cavity semiconductor laser for applications in methane detection. The laser does not require grating or epitaxial regrowth. A tuning range of over 16nm is achieved, with side mode suppression ratio (SMSR) above 30dB.
Simple and Compact V-cavity Semiconductor Laser with 50×100 GHz Wavelength Tuning.

Sen Zhang,Jianjun Meng,Shanli Guo,Lei Wang,Jian-Jun He

DOI: https://doi.org/10.1364/oe.21.013564

IF: 3.8

2013-01-01

Optics Express

Abstract:We report simple and compact V-cavity semiconductor laser capable of full-band wavelength tuning. A half-wave coupler is used to obtain high side-mode suppression ratio (SMSR) without any grating or epitaxial regrowth. Temperature induced gain spectrum shift is employed in combination with the Vernier tuning mechanism to extend the wavelength tuning range beyond the free spectral range limit. Wavelength tuning of 50 channels at 100GHz spacing with SMSR up to 38 dB has been demonstrated. We show that with a temperature variation of 35°C, the tuning range can be extended by about 15 nm, in contrast to 0.1 nm/°C for thermo-optic tuning range in grating based lasers. At a fixed temperature, consecutive wavelength tuning of 31 channels was achieved. The response time of the channel switching under the current-tuning regime is measured to be about 20μs. The large tuning range that can cover the full C-band will enable such a simple, compact and potentially low-cost tunable laser to be used in wavelength-agile access and data center networks.
Compact Silicon Photonic Hybrid Ring External Cavity (Shrec)/ingasb-Algaassb Wavelength-Tunable Laser Diode Operating from 1881-1947 Nm

Jia Xu Brian Sia,Wanjun Wang,Zhongliang Qiao,Xiang Li,Xin Guo,Jin Zhou,Callum G. Littlejohns,Zecen Zhang,Chongyang Liu,Graham T. Reed,Hong Wang

DOI: https://doi.org/10.1364/oe.383524

IF: 3.8

2020-01-01

Optics Express

Abstract:In recent years, the 2 µm waveband has been gaining significant attention due to its potential in the realization of several key technologies, specifically, future long-haul optical communications near the 1.9 µm wavelength region. In this work, we present a hybrid silicon photonic wavelength-tunable diode laser with an operating range of 1881-1947 nm (66 nm) for the first time, providing good compatibility with the hollow-core photonic bandgap fiber and thulium-doped fiber amplifier. Room-temperature continuous-wave operation was achieved with a favorable on-chip output power of 28 mW. Stable single-mode lasing was observed with side-mode suppression ratio up to 35 dB. Besides the abovementioned potential applications, the demonstrated wavelength region will find critical purpose in H2O spectroscopic sensing, optical logic, signal processing as well as enabling the strong optical Kerr effect on Si.
2 GHz Regeneratively Mode-locked Laser at 2 Micron

Jiarong Qin,Weiqi Jiang,Shiyu Zhu,Ruihong Dai,Yafei Meng,Yao Li,Fengqiu Wang

DOI: https://doi.org/10.1364/cleo_si.2020.sw4r.4

2020-01-01

Abstract:We have for the first time demonstrated a 2 GHz regeneratively mode-locked 2 gm fiber laser with PLL operation, which shows long-term stability. Such a source is well suited for soliton communications and signal processing.
Compact, Ultra-Tunable InGaSb/AlGaAsSb Si External Cavity Laser at the Mid-Infrared (MIR)

Jia Xu Brian Sia,Wanjun Wang,Zhongliang Qiao,Xiang Li,Xin Guo,Jin Zhou,Zecen Zhang,Callum Littlejohns,Chongyang Liu,Graham T. Reed,Hong Wang

DOI: https://doi.org/10.1364/cleo_si.2019.stu4o.1

2019-01-01

Abstract:We present the first MIR hybrid Si external cavity laser with a tunable range below the 2 μm mark. To the best of our knowledge, we have achieved the largest tunable range of 66 nm (1881–1947 nm) near the 2 μm waveband in silicon photonics. © 2019 The Author(s)
16×100GHz digitally wavelength switchable V-coupled-cavity laser with 40dB SMSR

Jialiang Jin,Lei Wang,Tingting Yu,Yin Wang,Jianjun He

DOI: https://doi.org/10.1109/iqec-cleo.2011.6194175

2011-01-01

Abstract:As an alternative to sophisticated tunable laser that are currently deployed in optical networks, we present a simple and compact digitally wavelength switchable laser based on Vcoupled cavities. Single-electrode-controlled wavelength switching over 16 channels with 100GHz spacing is demonstrated for the first time with side-mode-suppression-ratio (SMSR) as high as 40dB. The fabrication process is similar to that of a Fabry-Perot laser and the device size is only 500μm×300μm. © 2011 AOS.
Modal Gain Characteristics of a 2 Μm InGaSb/AlGaAsSb Passively Mode-Locked Quantum Well Laser

Xiang Li,Hong Wang,Zhongliang Qiao,Xin Guo,Geok Ing Ng,Yu Zhang,Zhichuan Niu,Cunzhu Tong,Chongyang Liu

DOI: https://doi.org/10.1063/1.5010015

IF: 4

2017-01-01

Applied Physics Letters

Abstract:Passive mode locking with a fundamental repetition rate at ∼18.46 GHz is demonstrated in a two-section InGaSb/AlGaAsSb quantum well laser emitting at 2 μm. Modal gain characteristics of the laser are investigated by performing the Hakki-Paoli method to gain better insight into the impact of the absorber bias voltage (Va) on the light output. The lasing action moves to longer wavelengths markedly with increasing negative Va. The light output contains more longitudinal modes in the mode locking regime if the gain bandwidth is larger at a certain Va. Our findings provide guidelines for output characteristics of the mode-locked laser.
Dual Wavelength Slot Coupled Fabry-Perot Semiconductor Laser

Zhipeng Hu,Lin Li,Xiaobo Zhang,Jian-Jun He

DOI: https://doi.org/10.1109/piers.2016.7735465

2016-01-01

Abstract:We present the device fabrication and experimental results of a dual wavelength slot coupled semiconductor laser for photonic millimeter-wave generation. The threshold current of the laser is about 35 mA. Dual-mode lasing with wavelength difference around 0.35nm was realized with SMSR better than 28 dB. By tuning the bias currents of the laser sections, the wavelength detuning of the doublet mode can be continuously tuned from 0.3nm to 0.42nm with SMSR better than 25 dB, corresponding to a frequency difference between 37.5 GHz and 52.5 GHz.
Experimental Demonstration of Subnano-Second Wavelength Switching in V-Coupled-Cavity Semiconductor Laser

Shanli Guo,Jianjun Meng,Lei Wang,Li Zou,Hongli Zhu,Jian-Jun He

DOI: https://doi.org/10.1364/acpc.2012.as4h.6

2012-01-01

Abstract:The tuning characteristics based on both free carrier dispersion and thermal effect induced by the tuning current of a V-coupled-cavity laser are investigated. Sub-naosecond and tens of microseconds wavelength switching time between two neighboring channels are measured, respectively.
Electro-optically Tunable Microwave Source Based on Composite-Cavity Microchip Laser

Yunfei Qiao,Shilie Zheng,Hao Chi,Xiaofeng Jin,Xianmin Zhang

DOI: https://doi.org/10.1364/oe.20.029090

IF: 3.8

2012-01-01

Optics Express

Abstract:A compact and electric tuning microwave source based on a diode-pumped composite Nd:YAG-LiNbO(3) cavity microchip laser is demonstrated. The electro-optical element introduces an electric tuning intra-cavity birefringence which causes a tunable frequency difference between two spilt orthogonal polarization states of a longitude mode. Thus a continuously tunable microwave signal with frequency up to 14.12 GHz can be easily generated by beating the two polarization modes on a high speed photodetector.
Compact passively Q-switched single-frequency distributed Bragg reflector fiber laser at 2.0 µm

Siyuan Fang,Bilei Zhou,Zhe Guan,Changsheng Yang,Qilai Zhao,Wei Lin,Zhouming Feng,Shanhui Xu

DOI: https://doi.org/10.1364/AO.443962

2021-12-01

Abstract:Based mainly on the distributed Bragg reflector (DBR) short linear cavity with a 1.6-cm-long heavily Tm3+-doped germanate glass fiber and semiconductor saturable absorber mirror (SESAM), a compact passively Q-switched single-frequency fiber laser at around 1950 nm is demonstrated experimentally. By comparing pulse characters of Q-switched operations fulfilled via SESAMs with different parameters, a stable output pulse is optimized to deliver a maximum average power of 22.2 mW, a peak power of 0.67 W, and an optical signal-to-noise ratio over 61 dB. Moreover, the repetition rate of the output pulse can be tuned from 92 to 520 kHz with a narrowest pulse width of 64 ns. To the best of our knowledge, this is the first time a 2.0 µm passively Q-switched single-frequency DBR Tm3+-doped fiber laser has been realized, and it shows great potential application in remote sensing, biomedical science, and nonlinear optics.
Programmable Wide Band Wavelength Tuning External-Cavity Semiconductor Laser

Zhongqi Pan,Jinqiang Yang,Yabing Ye,Hanyi Zhang,Yili Guo,Bingkun Zhou

DOI: https://doi.org/10.3321/j.issn:0253-2239.1999.02.014

1999-01-01

Abstract:The wide band wavelength tuning external-cavity semiconductor laser was theoretically and experimentally analyzed. The maximum tuning range and continuous tuning condition were given. The principle, configuration and control technique of programmable wide band wavelength tuning external-cavity semiconductor laser were described. As wide as 75 nm tuning range and 0.01 nm tuning resolution were realized.
Passively Mode-Locked Fiber Laser with a Semiconductor Saturable Absorber Mirror

WANG Jing,ZHANG Hong-ming,ZHANG Jun,YAN Meng,YAO Min-yu

DOI: https://doi.org/10.3321/j.issn:0258-7025.2007.02.003

2007-01-01

Chinese Journal of Lasers

Abstract:Using a semiconductor saturable absorber mirror(SESAM),a passively mode-locked fiber ring laser was demonstrated and stable sub-picosecond pulses were produced.The repetition frequency of pulse trains was several MHz.Nearly transform-limited 422 fs pulses with spectrum width of 6.35 nm were obtained,without any satellite pulses or pedestal.The duration of the pulses was measured by an autocorrelator with second harmonic generation,and pulses as narrow as 377 fs were achieved.During 10 hours,the laser can work stablely.The experimental setup was simple,compact,and self-started.
Dual-wavelength self-mode-locked semiconductor disk laser

Xiao-Hong Shen,Ying-Ying Zeng,Lin Mao,Ren-Jiang Zhu,Tao Wang,Hai-Jun Luo,Cun-Zhu Tong,Li-Jie Wang,Yan-Rong Song,Peng Zhang,,,,

DOI: https://doi.org/10.7498/aps.71.20220483

IF: 0.906

2022-01-01

Acta Physica Sinica

Abstract:Dual-wavelength mode-locked lasers can be widely used in optical communication, pump-probe experiment, nonlinear frequency conversion, etc. In this paper, a dual-wavelength self-mode-locked semiconductor disk laser is reported for the first time, to the best of our knowledge. A simple linear resonator is formed by using a high reflectivity distributed Bragg reflector at the bottom of the gain chip, and an external output mirror; the cavity length is about 135 mm, with no need of additional inserted elements. Based on the Kerr effect of the gain medium and the soft aperture formed by the pump spot on the gain chip, along with the fine adjustment of cavity length and pump intensity, the mode-locking process can be started from the free running and the stable self-mode-locking can be realized. The mode-locked pulse width is 4.3 ps, the repetition rate is 1.1 GHz, and the maximum output power is 323.9 mW, which corresponds to a peak power of 68 W. After the laser is mode locked, a readily available blade, which can introduce a wavelength-dependent loss for different laser modes, resulting in a lager cavity loss for a longer-wavelength mode and a smaller cavity loss for a shorter-wavelength mode, is used as a wavelength tuning element, and is inserted into the cavity in the direction perpendicular to the optical axis of the resonator. By changing the depth of the blade inserted into the cavity, the laser wavelength can be continuously tuned from the initial oscillating wavelength (longer-wavelength) to a shorter wavelength, a stable dual-wavelength output with equal intensity can be obtained at a specific position, and the stable continuous-wave mode-locking can be maintained simultaneously. The steady dual-wavelengths in the experiment are 951 and 961 nm, and the corresponding output power is 32 mW. The above dual-wavelength outputs have good coherence since they are stimulated radiations from the same gain chip. Meanwhile, they have relatively high peak power and strictly meet the coaxial conditions, and these are all advantages for the difference frequency generation (DFG). The frequency of the DFG in the experiment is approximately 3.3 THz, which can be widely used in laser radar, remote sensing, homeland security, counter-terrorism, atmospheric and environmental monitoring and otherareas.

physics, multidisciplinary
All-fiber GHz few-cycle pulse generation at 2 µm

Zhaoheng Liang,Minjie Pan,Wei Lin,Nan Zhang,Junpeng Wen,Xuewen Chen,Lin Ling,Zihan Li,Xiaoming Wei,Zhongmin Yang

DOI: https://doi.org/10.1364/OL.534971

2024-10-01

Abstract:We demonstrate an all-fiber GHz mode-locked laser system with few-cycle duration operating at 2 µm. Based on a dispersion-managed mode-locked oscillator, a multi-stage fiber amplifier, and a nonlinear pulse compressor, the laser system can deliver watt-level few-cycle pulses at a fundamental repetition rate of 1.041 GHz. This 2-µm pulsed laser offers outstanding performance metrics, including a pulse duration of 33 fs (corresponding to ∼5 optical cycles) and an average power of 4.17 W. Moreover, the all-fiber laser system exhibits excellent power stability, and the integrated relative intensity noise (RIN) is only 0.052% (10 Hz-1 MHz). It is anticipated that this new, to the best of our knowledge, laser source is promising for frontier applications, including coherent supercontinuum generation, nonlinear frequency conversion, and laser-material interaction.
20 GHz Actively Mode-Locked Thulium Fiber Laser.

Jiarong Qin,Ruihong Dai,Yao Li,Yafei Meng,Yongbing Xu,Shining Zhu,Fengqiu Wang

DOI: https://doi.org/10.1364/oe.26.025769

IF: 3.8

2018-01-01

Optics Express

Abstract:A high repetition-rate actively mode-locked thulium fiber laser is demonstrated where an electro-optic lithium niobate phase modulator is used to synchronize the longitudinal modes in the cavity. The repetition rate of the actively mode-locked laser is tunable from 14.6 MHz to 19 GHz, where the 19 GHz pulses exhibit a super-mode suppression ratio of 46 dB. Furthermore, the output pulse width could be manipulated through finely controlling the detuning frequency or repetition rate. We have also experimentally observed rational harmonic mode-locking in the laser and obtained 14 GHz and 21 GHz repetition rate pulses using a 7 GHz modulating signal. To the best of our knowledge, we have improved the repetition-rate of actively mode-locked thulium fiber laser by more than one order of magnitude. Such a high repetition source can be readily synchronized to a master clock, which makes it very suitable for high speed optical data processing, communication and remote sensing.

2 Μm Actively Mode-Locked External-Cavity Semiconductor Laser

Microlaser based on a hybrid structure of a semiconductor nanowire and a silica microdisk cavity.

15 GHz Actively Mode-Locked Fiber Laser at 2 Micron

Widely Wavelength Switchable V-Coupled-Cavity Semiconductor Laser With Similar To 40 Db Side-Mode Suppression Ratio

Single-Electrode-Controlled 26x100ghz Wavelength Switching in V-Coupled-Cavity Semiconductor Laser

1650-nm-band Tunable V-Cavity Semiconductor Laser

Simple and Compact V-cavity Semiconductor Laser with 50×100 GHz Wavelength Tuning.

Compact Silicon Photonic Hybrid Ring External Cavity (Shrec)/ingasb-Algaassb Wavelength-Tunable Laser Diode Operating from 1881-1947 Nm

2 GHz Regeneratively Mode-locked Laser at 2 Micron

Compact, Ultra-Tunable InGaSb/AlGaAsSb Si External Cavity Laser at the Mid-Infrared (MIR)

16×100GHz digitally wavelength switchable V-coupled-cavity laser with 40dB SMSR

Modal Gain Characteristics of a 2 Μm InGaSb/AlGaAsSb Passively Mode-Locked Quantum Well Laser

Dual Wavelength Slot Coupled Fabry-Perot Semiconductor Laser

Experimental Demonstration of Subnano-Second Wavelength Switching in V-Coupled-Cavity Semiconductor Laser

Electro-optically Tunable Microwave Source Based on Composite-Cavity Microchip Laser

Compact passively Q-switched single-frequency distributed Bragg reflector fiber laser at 2.0 µm

Programmable Wide Band Wavelength Tuning External-Cavity Semiconductor Laser

Passively Mode-Locked Fiber Laser with a Semiconductor Saturable Absorber Mirror

Dual-wavelength self-mode-locked semiconductor disk laser

All-fiber GHz few-cycle pulse generation at 2 µm

20 GHz Actively Mode-Locked Thulium Fiber Laser.