Abstract:Silicon-based complementary metal-oxide-semiconductor (CMOS) has been the mainstream logic style for modern digital integrated circuits (ICs) for decades but will meet its performance limits soon. Extensive investigations have thus been carried out using other semiconductors, especially those with extremely high carrier mobility. However, these materials usually have small or even zero band gap, which leads inevitably to large leakage current or voltage loss in ICs based on these semiconductors. In this work, we propose and demonstrate a strengthened CMOS (SCMOS) logic style using modified field-effect transistors (FETs) to solve this problem, that is, to achieve high performance, utilizing the high carrier mobility in these materials, and to reduce the current leakage resulting from their small band gap. Conventional CMOS FETs are modified to have an asymmetric structure where an additional assistant gate is introduced near the drain to further lower the potential barrier in on-state and to increase the barrier in off-state. SCMOS ICs are constructed using these modified asymmetric CMOS FETs, which demonstrate perfect rail-to-rail output with negligible voltage loss and 3 orders of magnitude suppression of the static power consumption and an operating speed similar to or even higher than that of CMOS ICs. Here, SCMOS is demonstrated using carbon nanotubes, but, in principle, this logic style can be used in ICs based on any small-band-gap semiconductors to provide simultaneously high performance and low power consumption.

Design of High Performance CMOS Logic Circuits with Low Temperature Sensitivity

Design of Adiabatic Timer Based on Three Essential Circuit Elements for Adiabatic Circuits

Temperature Dependences of Threshold Voltage and Drain-Induced Barrier Lowering in 60nm Gate Length MOS Transistors

Analysis Of Temperature Effects On Maximum Power-Efficiency Of Pass Transistor Logic Networks In Low-Voltage Cmos

Low-temperature CMOS Technology for High-Performance Computing: Development and Challenges

A 1770- $\mu$ M 2 Leakage-Based Digital Temperature Sensor with Supply Sensitivity Suppression in 55-Nm CMOS

Optimized Cryo-CMOS Technology with VTH<0.2V and Ion>1.2mA/um for High-Peformance Computing

Ultra-low Power Dissipation of Improved Complementary Pass-Transistor Adiabatic Logic Circuits Based on FinFETs

Temperature-Aware NBTI Modeling Techniques in Digital Circuits.

Strengthened Complementary Metal-Oxide-Semiconductor Logic for Small-Band-Gap Semiconductor-Based High-Performance and Low-Power Application

Complementary junction field-effect transistor logic gate operational at 300$^\circ$C with 1.4 V supply voltage

Stochastic thermodynamic bounds on logical circuit operation

Performance Analysis of Various Complementary Metaloxide Semiconductor Logics for High Speed Very Large Scale Integration Circuits

Dynamic Performance Analysis of Logic Gates Based on p -GaN/AlGaN/GaN HEMTs at High Temperature

Low Power Adiabatic Logic Based on FinFETs

Optimal Logic Architecture and Supply Voltage Selection Method to Reduce the Impact of the Threshold Voltage Variation on the Timing

Reducing the power consumption of two-dimensional logic transistors

Modeling of Circuits with Strongly Temperature Dependent Thermal Conductivities for Cryogenic CMOS

Ultra-Low-Power and Performance-Improved Logic Circuit Using Hybrid TFET-MOSFET Standard Cells Topologies and Optimized Digital Front-End Process

CMOS-based carbon nanotube pass-transistor logic integrated circuits

Thermodynamics of Computation for CMOS NAND Gate