Abstract:Abstract We deposited high-quality molybdenum disulfide (MoS 2 ) monolayer and multilayer crystals on SiO 2 /Si substrates, by means of a chemical vapor deposition (CVD) process at atmospheric pressure. Notably, NaCl salt was used as component of the precursors to assist the growth of MoS 2 crystals, which were intended for use as the active channel layer in the fabrication of field-effect transistors (FETs). The resulting MoS 2 crystals from this CVD process were analyzed by optical, scanning electron, and atomic force microscopies, and by Raman and photoluminescence spectroscopies. The optical images and the micrographs obtained by SEM revealed the formation of dispersed MoS 2 crystals with a triangular shape all over the SiO 2 surface. The thickness of the MoS 2 crystals, analyzed by atomic force microscopy, showed minimum values of around 0.7 nm, confirming the formation of monolayers. Additionally, multilayers with larger thickness were also identified. The Raman and photoluminescence spectra of the MoS 2 crystals corroborated the formation of single and multiple layers. The fabrication of the FET back-SiO 2 -gate configuration was made by depositing patterned source and drain Ti contacts on the dispersed MoS 2 crystals to achieve the Ti/MoS 2 /SiO 2 /Si layer stacks. MoS 2 -based FETs with one and three layers were assembled and their electrical response analyzed by I–V output and transfer curves showing the typical characteristics of an n -type semiconductor channel operating in depletion mode. The electrical performance parameters of the devices, such as mobility and threshold voltage, were also determined from this analysis. Finally, to enhance their electrical response, the MoS 2 -based devices were thermally annealed at 200 °C for 30 min in Ar atmosphere. The increase in the mobility of the device was 176% compared to the device before the treatment.

Impact of Quantum Capacitance on the Characteristics of MoS2 Field Effect Transistor

How do Quantum Effects Influence the Capacitance and Carrier Density of Monolayer MoS$_2$ Transistors?

Quantum-mechanical effect in atomically thin MoS2 FET

Electrical Characterization of Back-Gated Bi-Layer MoS2 Field-Effect Transistors and the Effect of Ambient on Their Performances

Effect of Dielectric Interface on the Performance of MoS2 Transistors.

Impact and Origin of Interface States in MOS Capacitor with Monolayer MoS2 and HfO2 High-k Dielectric

Electrical characterization of MoS2 field-effect transistors with different dielectric polymer gate

Effect of Thickness and Thermal Treatment on the Electrical Performance of 2D MoS2 Monolayer and Multilayer Field-Effect Transistors

Band tail interface states and quantum capacitance in a monolayer molybdenum disulfide field-effect-transistor

Charge Transport and Quantum Confinement in MoS2dual-gated Transistors

Probing the Field-Effect Transistor with Monolayer MoS2 Prepared by APCVD

Comparative simulation study on MoS2 FET and CMOS transistor

Enhancement of Carrier Mobility in Mos2 Field Effect Transistors by A Sio2 Protective Layer

Modeling the Impact of Phonon Scattering with Strain Effects on the Electrical Properties of MoS2 Field-Effect Transistors

Quantum Transport Simulation of Sub-1-nm Gate Length Monolayer MoS2 Transistors

A Study on Ionic Gated MoS2 Phototransistors

Quantum transport in a nanosize double-gate metal-oxide-semiconductor field-effect transistor

MoS2transistors gated by ferroelectric HfZrO2with MoS2/mica heterojunction interface

Electrical performance of multilayer MoS2 transistors on high-κ Al2O3 coated Si substrates

Advances in MoS2-Based Field Effect Transistors (FETs)

Modulation of Capacitance Magnitude by Charging/Discharging in Silicon Nanocrystals Distributed Throughout the Gate Oxide in MOS Structures