Abstract:To improve the interface and reduce the dark current of MoS2‐based flexible photodetector, in this study, the passivation layer is employed to hinder the leakage current, which can suppress the gate leakage current decrease from 10−5 to 10−9 A, and thus, the photoresponsivity can increase by 29 times. Due to the atomic thickness of 2D MoS2 film, the electronic structure is easily tunable by electric field and exhibits abundant property. However, due to the limit capacitance of inorganic dielectric, the tunability is still not well exhibited. Herein, a MoS2 phototransistor with large tunability driven by ion‐gel film is fabricated. To improve the interface and reduce the dark current, the passivation layer is used to hinder the leakage current. With the passivation layer, there will be a specific barrier height on the interface of metal electrodes and ion‐gel membrane. Under effect of the PVA (polyvinyl alcohol) passivation layer, the current on/off radio can reach 107 and the mobility can reach 6.54 cm2/(Vs) superior to the one without passivation layer. There is an abnormal behavior in the transistor including positive and negative photoresponse due to the coupling of the photogating effect and the adsorption of negative ion. The photoresponsivity can increase by 29 times which can reach 603.48 A W−1 at 400 nm illumination. Furthermore, the flexible transistor based on ion‐gel can be demonstrated and it found that the transistor still has a considerable photoresponse with strain of 0.49%. This work provides a new solution for flexible wearable electronic and photoelectronic detection field.

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High Performance MoS2 Phototransistors Photogated by PN Junction

High-performance MoS2 Phototransistors with Hf1–x Al X O Back-Gate Dielectric Layer Grown by Plasma Enhanced Atomic Layer Deposition

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A Dual-gate MoS2 Photodetector Based on Interface Coupling Effect

Highly Tunable, Broadband, and Negative Photoresponse MoS 2 Photodetector Driven by Ion-Gel Gate Dielectrics

A floating gate negative capacitance MoS2 phototransistor with high photosensitivity

Suppress Dark‐Current for High‐Photoresponse MoS2 Transistor

Graphene Top-gated Mos2 Phototransistors

Infrared Light Gated MoS_2 Field Effect Transistor

Gap-Mode Surface-Plasmon-Enhanced Photoluminescence and Photoresponse of MoS2

Dual-gate MoS2phototransistor with Atomic-Layer-deposited HfO2as Top-Gate Dielectric for Ultrahigh Photoresponsivity.

Ultrahigh Photoresponsivity MoS2 Photodetector with Tunable Photocurrent Generation Mechanism.

Enhanced photoresponse of TiO2/MoS2 heterostructure phototransistors by the coupling of interface charge transfer and photogating

Polarizable Nonvolatile Ferroelectric Gating in Monolayer MoS2 Phototransistors

Scaling Analysis of High Gain Monolayer MoS 2 Photodetector for Its Performance Optimization