RESISTIVE RANDOM ACCESS MEMORY OF SMALL ELECTRODE STRUCTURE AND PREPARATION METHOD THEREFOR

Cai Yimao,Mao Jun,Huang Ru,Tan Shenghu,Huang Yinglong,Pan Yue

2013-01-01

Abstract:Disclosed are a resistive random access memory of a small electrode structure and a preparation method therefor, which belong to the field of semiconductor resistive random access memories in very-large-scale integration. The resistive random access memory in the present invention comprises an Al electrode layer, an SiO2 layer, an Si layer, a resistive layer and a lower electrode layer. The Al electrode layer is electrically connected to the resistive layer through one or more conductive channels, and the conductive channel(s) is formed by the reason that Si is dissolved in Al because Al penetrates into the Si layer through a flaw of the SiO2 layer. The method comprises: first, preparing a lower electrode layer, a resistive layer, an Si layer and an SiO2 layer on a substrate in sequence; then, preparing an Al electrode layer on the SiO2 layer; and finally, performing annealing on the obtained structure mentioned above. By only using the conventional technical process, the method can obtain a very small actual electrode, thereby reducing the cost, optimizing the device, and achieving smaller actual electrode area at a lower cost.