Abstract:Resistive random-access memory (RRAM) has been extensively investigated for 20 years due to its excellent advantages, including scalability, switching speed, compatibility with the complementary metal oxide semiconductor process, and neuromorphic computing application. However, the issue of memristor reliability for cycle to cycle and device to device resulting from the random ion drift and diffusion in solid-state thin films is still a great challenge for commercialization. Therefore, controlling the internal ionic process to improve the memristor performance and reliability is a primary and urgent task. Here, a Ni nanocone array prepared by an electrodeposition method is integrated with an Ag/Al2O3/Pt resistive switching device. The nanocone-array-based memristor yields superior switching performance, including an ultralow set voltage (-0.37 V), a concentrated voltage/resistance distribution (CV 14.8%/32.7%), robust endurance (>105 cycles), and multilevel storage capability. A finite element analysis, transmission electron microscope observation, and current mapping test indicate that the local enhancement of the electric field confines the ionic migration process and yields a predictable formation and dissolution process of the conductive filament. The nanocone-array-based RRAM device provides a new and feasible method to control the conductive filament growth reliably, which paves the way for memristor development.

Resistive random-access memory (RRAM) and manufacturing method thereof

High-consistency high-speed resistive random access memory (RRAM) and producing method thereof

Flexible Nanodot Resistive Random Access Memory (RRAM) Based on All Low-Temperature Process and Manufacturing Method Thereof

Organic resistive random access memory and manufacturing method thereof

Overview of Resistive Random Access Memory (RRAM): Materials, Filament Mechanisms, Performance Optimization, and Prospects

RESISTIVE RANDOM ACCESS MEMORY OF SMALL ELECTRODE STRUCTURE AND PREPARATION METHOD THEREFOR

An Overview of Resistive Random Access Memory Devices

Low Power and High Uniformity of HfOx-based RRAM Via Tip-Enhanced Electric Fields

A Method to Reduce Forming Voltage Without Degrading Device Performance in Hafnium Oxide-Based 1T1R Resistive Random Access Memory

A Novel Programming Method for Multilevel RRAM Based on Pulse Width Modulation

Resistive Random Access Memory for Future Information Processing System.

Programming Strategy Optimization of RRAM Fabricated by 28 nm Standard CMOS Process

Novel 2D Materials-based Resistive Devices

Research Progress in Flexible Resistive Random Access Memory Materials

Progress in Development of Resistive RAM Peripheral Circuit

High performance and low power consumption resistive random access memory with Ag/Fe<sub>2</sub>O<sub>3</sub>/Pt structure

Recent Advances in Flexible Resistive Random Access Memory

Ultralow Set Voltage and Enhanced Switching Reliability for Resistive Random-Access Memory Enabled by an Electrodeposited Nanocone Array.

A 3.75mb Embedded RRAM IP on 40nm High-Voltage CMOS Technology

The storage mechanism of resisitive random access

Resistive RAM:A Novel Generation Memory Technology