Abstract:Here, a current-accelerated phase cycling by an in situ current-induced oxidation process was demonstrated to reversibly switch the local metallic Cu and semiconducting Cu2O phases of patterned polycrystalline copper nanobelts. Once the Cu nanobelts were applied by a direct-current bias of ∼0.5 to 1 V in air with opposite polarities, the resistance between several hundred ohms and more than MΩ can be manipulated. In practice, the thickness of 60 nm with a moderate grain size inhibiting both electromigration and permanent oxidation is the optimized condition for reversible switching when the oxygen supply is sufficient. More than 40% of the copper localized beneath the positively biased electrode was oxidized assisted by the Joule heating, blocking the current flow. On the contrary, the reduction reaction of Cu2O was activated by the thermally assisted electromigration of Cu atoms penetrating the interlayer at the reverse bias. Finally, based on a high on/off ratio, the fast switching and the scalable production, reusable feasibility based on copper nanobelts such as the memristor array was demonstrated.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsnano.0c09419?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsnano.0c09419</a>.Endurance, stability, and retention test of Ni/Cu/Ni devices; nano-XANES based on fluorescence mode; simulated and fitted results of Cu K-edge XANES spectra; pseudo-operando SPEM results; linear-scale current–voltage relationship; experimental and fitted current–voltage relationship at reverse bias; current–voltage measurements and the SEM image of devices; dependence of current–voltage relationship on compliance current values; schematic procedure to reconstruct stoichiometric images based on the pseudo-operando nano-XANES mapping; pseudo-operando profile of oxidation in the device; pseudo-operando intensity mapping; data analysis procedure using EELS; vertical and pseudo-operando profile of oxidation in the device; dependence of device geometry on the switching (<a class="ext-link" href="/doi/suppl/10.1021/acsnano.0c09419/suppl_file/nn0c09419_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

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