Abstract:One critical problem inhibiting the application of MoS2 field-effect transistors (FETs) is the hysteresis in their transfer characteristics, which is typically associated with charge trapping (CT) and charge detrapping (CDT) induced by atomic defects at the MoS2-dielectric interface. Here, we propose a novel atomistic framework to simulate electronic processes across the MoS2-SiO2 interface, demonstrating the distinct CT/CDT behavior of different types of atomic defects and further revealing the defect type(s) that most likely cause hysteresis. An anharmonic approximation of the classical Marcus theory is developed and combined with state-of-the-art density functional theory to calculate the gate bias-dependent CT/CDT rates. All the key electronic quantities are calculated with Heyd-Scuseria-Ernzerhof hybrid functionals. The results show that single Si-dangling bond defects are active electron trapping centers. Single O-dangling bond defects are active hole trapping centers, which are more likely to be responsible for the hysteresis phenomenon due to their significant CT rate and apparent threshold voltage shift. In contrast, double Si-dangling bond defects are not active trap centers. These findings provide fundamental physical insights for understanding the hysteresis behavior of MoS2 FETs and provide vital support for understanding and solving the reliability of nanoscale devices.

Investigation of Charge Trapping Mechanism in MoS2 Field Effect Transistor by Incorporating Al into Host La2O3 As Gate Dielectric

Investigation of charge trapping mechanism in MoS2field effect transistor by incorporating Al into host La2O3as gate dielectric

Tunable charge-trap memory based on few-layer MoS2.

Charge Trapping At The Mos2-Sio2 Interface And Its Effects On The Characteristics Of Mos2 Metal-Oxide-Semiconductor Field Effect Transistors

Ultrafast reconfigurable direct charge trapping devices based on few-layer MoS 2

Effects of Charge Trapping at the MoS2–SiO2 Interface on the Stability of Subthreshold Swing of MoS2 Field Effect Transistors

MoS2 Field-Effect Transistors with Lead Zirconate-Titanate Ferroelectric Gating

Effect of Dielectric Interface on the Performance of MoS2 Transistors.

Operation Mode Switchable Charge-Trap Memory Based on Few-Layer MoS2

Charge Transport and Quantum Confinement in MoS2dual-gated Transistors

Defects Induced Charge Trapping/Detrapping and Hysteresis Phenomenon in MoS2 Field-Effect Transistors: Mechanism Revealed by Anharmonic Marcus Charge Transfer Theory

The Integration of Sub-10 Nm Gate Oxide on Mos2 with Ultra Low Leakage and Enhanced Mobility

Electrical performance of multilayer MoS2 transistors on high-κ Al2O3 coated Si substrates

Electrical Performance Of Multilayer Mos2 Transistors On High-Kappa Al2o3 Coated Si Substrates

Electronic Structure and Charge-Trapping Characteristics of the Al2O3-TiAlO-SiO2 Gate Stack for Nonvolatile Memory Applications

Defects Induced Charge Trapping/Detrapping and Hysteresis Phenomenon in MoS 2 Field-Effect Transistors: Mechanism Revealed by Anharmonic Marcus Charge Transfer Theory

Optoelectronic memory in 2D MoS2 field effect transistor

The Dominant Factors Affecting the Memory Characteristics of (ta2o5)x(al2o3)1−x High-K Charge-Trapping Devices

High-Performance Logic and Memory Devices Based on a Dual-Gated MoS2 Architecture

Enhanced charge storage performance in AlTi4Ox/Al2O3 multilayer charge trapping memory devices

Manipulation of the electrical and memory properties of MoS$_2$ field-effect transistors by highly charged ion irradiation