Abstract:This paper presents split attenuators combined with adjustable gain amplifiers as a two-stage time-gain compensation (TGC), such that it can extend the gain range of the Analog Front-end (AFE) for ultrasound image systems. To avoid artifacts caused by discrete gain control, continuous dB-linear gain varying with time is achieved by the split two-stage resistive voltage-divider attenuator whose attenuation value is decided by the MOSFET resistance which is inversely proportional to area. Rigorous theoretical analysis proves that placing the attenuators in the front and back stages of a programmable-gain amplifier (PGA) in the AFE as the proposed architecture demonstrated solves the contradiction between extending the gain range and saving area. The total attenuation range is broken down into two stages so that the system noise performance is optimized and unlike the prior single-stage-attenuator work, the dB-linearity is free from the negative impact of parasitic resistance introduced by area expansion. The proposed AFE has been fabricated by a 28-nm CMOS process, occupying 0.145 mm(2) active area and consuming 75mW from a 2.5 V supply. It achieves a 74.7 dB adjustable gain range while providing a 15 MHz/30 MHz switchable bandwidth for all gain modes. The lowest input-referred noise (IRN) of the system was measured as 2.38 nV/root Hz at 5MHz with the TGC reaching the highest gain.

Design of a Wideband Compact CMOS Integrated Attenuator with Low Insertion Loss and High Accuracy

A DC-32GHz 7-Bit Passive Attenuator with Capacitive Compensation Bandwidth Extension Technique in 55 Nm CMOS

Design Of A Low-Insertionphase-Shift Mmic Attenuator Integrated With A Serial-To-Parallel Converter

A DC-<i>Ka</i>-Band 7-Bit Passive Attenuator With Capacitive-Compensation-Based Bandwidth Extension Technique in 55-nm CMOS

A DC-28-GHz 7-Bit High-Accuracy Digital-Step Attenuator in 55-nm CMOS

An Ultra Broadband DC-40GHz 4-Bit GaAs Phemt MMIC Digital Attenuator

Design of a Wideband CMOS Digital Step Attenuator with High Accuracy and Low Phase Error

A wideband 6-bit Digital Attenuator with high accuracy in 65nm CMOS

A Novel Ultra Broadband 8-45 GHz 4-Bit GaAs Pseudomorphic High Electron Mobility Transistors (phemt) Monolithic Digital Attenuator Used for Gain Control of Transceivers

A 26-32Ghz Differential Attenuator with 0.23db RMS Attenuation Error and 11.2dbm IP1dB in 40nm CMOS Process

An Ultracompact DC–20-GHz Nmos-Based CMOS Attenuator

Ultra-wideband amplitude-phase compensation digital switch attenuator circuit

A Compact 2-18Ghz Ultra-Wideband Frequency-conversion T/R Module Based on a 3D Heterogeneous Integrated Process

An E-band Subradix Active Phase Shifter with < 0.69° RMS Phase Error and 16-Db Attenuation in 28-Nm CMOS

A 25-35 GHz 5-Bit Digital Attenuator with Low RMS Amplitude Error and Low Phase Variation in 65 Nm CMOS.

Wideband Attenuators Using Distributed Resistors for Attenuation Up to 30 Db.

A Dc-20ghz Attenuator Design with Rf Mems Technologies and Distributed Attenuation Networks

A Ku-band 180° Phase Shifter with 2-Bit Attenuation Control Based on High-pass/low-pass Network

A Miniaturized Reconfigurable Broadband Attenuator Based on RF MEMS Switches

A K-band CMOS Monopulse Comparator Incorporating the Phase-Invertible Variable Attenuator

28-Nm CMOS Ultrasound AFE with Split Attenuation for Optimizing Gain-Range, Noise, and Area