Abstract:This article presents an eight-element 17.7–19.2-GHz receiver front end with 1–2 concurrent beams in a 65-nm CMOS technology. Each output beam utilizes a temperature-compensation variable-gain amplifier (TC-VGA) to minimize the temperature-induced gain variation. The concept of the proposed TC-VGA and the realization of corresponding adaptive analog control are introduced in detail. The front-end architecture and circuit-level design to enable a flat wideband gain response, precise phase and amplitude control, low power consumption, and adaptive analog temperature compensation are presented. Wafer probing is conducted to measure the performance of the receiver front end. The measured gain-temperature coefficient is ±0.005 dB/°C from −15°C to 85 °C at 17.7–19.2 GHz, while the counterpart without temperature compensation is −0.1 dB/°C. The chip demonstrates a 28-dB power gain, a 26% 3-dB fractional bandwidth, a 3.2–4.1-dB noise figure (NF), and a −27.4-dBm input 1-dB gain compression point (IP $_{\mathrm {1\,dB}}$ ) for each element. In addition, each channel provides 7-bit phase-shifting resolution and 6-bit attenuation for a 15.75-dB gain range with a <1.5° root-mean-square (rms) phase error, and a < 0.22-dB rms amplitude error. The chip occupies $4.65\times2.77$ mm2 area with pads, equivalent to 1.61 mm2 per element (for two beams), and consumes 37.2 mW per element per beam. To the best of our knowledge, the receiver front end demonstrates the minimum gain variation with temperature among silicon RF-beamforming front ends.

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