Abstract:This article presents a wideband millimeter-wave power amplifier (PA) with a capacitive stability enhancement technique. It is composed of three differential cascode stages to attain high-power gain and large output power. To ensure the stabilization of the amplifier, a robust technique based on a series base capacitor is proposed and applied in each stage. Each capacitor creates a low-frequency zero to adjust the phase and amplitude responses of the differential cascode structure. As a result, the phase margin of the loop gain is increased remarkably. By adjusting the series base capacitors, the low-frequency zeros and gains of the three stages can be optimized. Therefore, the operating bandwidth is also extended. Meanwhile, a transformer-based four-path power combination network with a large current capacity is developed to further enlarge the output power. The circuit is demonstrated in a commercial 0.13 μm SiGe BiCMOS process. According to the measurement results, the PA obtains a saturated output power (P Sat ) of 18.5 dBm and output referred 1-dB compression point (OP 1dB ) of 16.32 dBm at 77 GHz. The tested small-signal gain is 26.7 dB at 77 GHz. Its 3 dB gain bandwidth is beyond 21.5 GHz, which ranges from 68.5 to 90 GHz. The P Sat variation is less than 0.57 dB at the frequency range from 70 to 85 GHz. The measurement also shows the PA with the proposed technique is unconditionally stable over the entire frequency band. The chip area is only 0.684 mm 2 .

A CMOS Programmable Gain Amplifier with Accurate Gain Control

A CMOS broadband precise programmable gain amplifier with bandwidth extension technique

An Ultra-low Noise Variable Gain Amplifier with Accurate dB-Linear Characteristic

A 3.8 Ghz Programmable Gain Amplifier with A 0.1 Db Gain Step

A Linear-in-Decibel Automatic Gain Control Amplifier with Dual Mode Continuous Gain Tuning

A Wideband BiCMOS Variable Gain Amplifier with Novel Continuous Db-Linear Gain Control and Temperature Compensation

An Accurate Db-Linear CMOS VGA Based on Double Duplicate Biasing Technique

A novel accurate dB-linear control circuit topology for variable gain amplifiers in BiCMOS technology

Linear-in-decibel Variable Gain Amplifier Design in 0.18µm SIGE BICMOS Technology

A 25-MHz bandwidth, 37-dB gain range CMOS Programmable Gain Amplifier with DC-Offset cancellation and driver buffer

A Wideband Digital Variable Gain Amplifier with DC Offset Cancellation in SiGe 0.18µm BiCMOS Technology

A 0.96-mW dB-Linear Variable Gain Amplifier With 0.4-dB Linearity Error Over a 62.4-dB Gain Tuning Range

A 100–117 GHz W-Band CMOS Power Amplifier With On-Chip Adaptive Biasing

A Wideband Db-Linear VGA with Temperature Compensation and Active Load

A 68.5~90 GHz High-Gain Power Amplifier with Capacitive Stability Enhancement Technique in 0.13 Μm SiGe BiCMOS

A Novel Ultra Broadband 8-45 GHz 4-Bit GaAs Pseudomorphic High Electron Mobility Transistors (phemt) Monolithic Digital Attenuator Used for Gain Control of Transceivers

A Low Power Programmable Gain Amplifier for Multi-mode Receiver

An Accurate Db-Linear Programmable-Gain Amplifier with Temperature-Robust Characteristic

An Inductorless Cmos Programmable-Gain Amplifier with A > 3 Ghz Bandwidth for 60 Ghz Wireless Transceivers

A Low-Power PGA with DC-Offset Cancellation in 65 Nm CMOS Process