Abstract:This study evaluated the mechanical properties and piezoresistivity of core-shell silicon carbide nanowires (C/S-SiCNWs) synthesized by a vapor-liquid-solid (VLS) technique, which are a promising material for harsh environmental micro electromechanical systems (MEMS) applications. The C/S-SiCNWs were composed of a crystalline cubic (3C) SiC core wrapped by an amorphous silicon dioxide (SiOx) shell; however, TEM observations of the NWs showed that hexagonal polytypes (2H, 4H, and 6H) were partially induced in the core by a stacking fault owing to a Shockley partial dislocation. The stress-strain relationship of the C/S-SiCNWs and SiC cores without an SiOx shell was examined using MEMS-based nanotensile tests. The tensile strengths of the C/S-SiCNWs and SiC cores were 7.0 GPa and 22.4 GPa on average, respectively. The lower strength of the C/S-SiCNWs could be attributed to the SiOx shell with the surface roughness as the breaking point. The Young's modulus of the C/S-SiCNWs was 247.2 GPa on average, whereas that of the SiC cores had a large value with scatter data ranging from 450 GPa to 580 GPa. The geometrical model of the SiC core based on the transmission electron microscopy (TEM) observations rationalized this scatter data by the volume content of the stacking fault in the core. The piezoresistive effects of the C/S-SiCNW and SiC core were also evaluated from the I-V characteristics under uniaxial tensile strain. The gauge factor of –30.7 at 0.008 ε for the C/S-SiCNW was approximately two-times larger than that of –15.8 at 0.01 ε for the SiC core. This could be caused by an increase of the surface state density at the SiOx/SiC interface owing to the positive fixed oxide charge of the SiOx shell.

Size- and Temperature-Dependent Young's Modulus of SiC Nanowires Determined by a Laser-Doppler Vibration Measurement

Size Effects on the Stiffness of Silica Nanowires.

Effect of Different Oxide Thickness on the Bending Young'S Modulus of Sio2@Sic Nanowires

Temperature-dependent Raman Scattering of Silicon Nanowires.

Tensile mechanical behaviors of cubic silicon carbide thin films

Reduction in Modulus of Suspended Sub-2 nm Single Crystalline Silicon Nanomembranes

Effect of crystal orientation and temperature on the mechanical properties and fracture mechanism of silicon carbide nanowires

C244 Thermal Conductivity of Individual SiC Nanowires

Thermal Conductivity of SiC Microwires: Effect of Temperature and Structural Domain Size Uncovered by 0 K Limit Phonon Scattering

Tunable Resonant Frequencies For Determining Young'S Moduli Of Nanowires

Strain engineering of core–shell silicon carbide nanowires for mechanical and piezoresistive characterizations

Tensile Properties of Two-Dimensional Carbon Fiber Reinforced Silicon Carbide Composites at Temperatures Up to 1800 °C in Air

Electromagnetic wave absorption and mechanical properties of SiC nanowire/low-melting-point glass composites sintered at 580°C in air

Crystallinity and Surface Effects on Young'S Modulus of Cuo Nanowires

Young's Modulus Characterization of Nano-Level Silicon Nanomembrane

Fabrication of All-SiC Fiber-Optic Pressure Sensors for High-Temperature Applications

Specific Heat Of Individual Silicon Nanowires

Tuning the morphologies of SiC nanowires via the control of growth temperature, and their photoluminescence properties.

Determination of Doping and Temperature Dependent Elastic Constants of Degenerately Doped Silicon from MEMS Resonators

Tunable Thermal Conductivity of Two-Dimensional SiC Nanosheets by Grain Boundaries: Implications for the Thermo-Mechanical Sensor

Thermal Conductivity of 3C/4H-SiC Nanowires by Molecular Dynamics Simulation