Abstract:In this article, for the first time, we explained a detailed physical insight for negative differential resistance (NDR) to positive differential resistance (PDR) transition in a ferroelectric (FE)-based negative capacitance (NC) FET and also its dependence on the device terminal voltages. Using extensive well-calibrated TCAD simulations, we have investigated this phenomenon on fully depleted silicon on insulator (FDSOI)-NCFET. The NDR-to-PDR transition occurs due to FE layer capacitance changes from a negative to positive state during channel pinchoff. This, in turn, results in a valley point in the output characteristic ( IDS - VDS ) at which the output resistance is infinite. We also found that we could alter the valley point location by modulating the vertical electric field through the FE layer in the channel pinchoff region using body bias ( VBB ). The interface oxide charges also impacted the NDR to PDR transition, and a positive interface charge results in faster NDR to PDR transition. Furthermore, we have utilized the modulation in the NDR-to-PDR transition due to VBB for designing a current mirror. Results show that the output current ( IOUT ) variation due to VDS reduces from ~8% to ~2% with VBB . We have also designed a single-stage common source (CS) amplifier and provided design guidelines to achieve a higher gain in the NDR region. The results obtained using a small-signal model of the FDSOI-NCFET demonstrate that ~25% higher gain can be achieved with the discussed design guidelines in the NDR region compared to the transition region of IDS - VDS . We have also explored the device scaling effect on the amplifier gain and found that ~ 2.23× gain can be increased with smaller channel length and higher device width.

Multipeak Negative-Differential-resistance Device by Combining SET and MOSFET

A Parasitic Elimination Bootstrapped Switch and a Fast Settling Residual Amplifier for High-Speed and High-Resolution Pipelined ADC

Charge transfer mechanism for realization of double negative differential transconductance

Multipeak negative differential resistance effects in nanocrystalline Si stacking MOS structures

Room-Temperature Multi-Peak Ndr in Nc-Si Quantum-Dot Stacking Mos Structures for Multiple Value Memory and Logic

A Novel High-Voltage Trench Gate Insulated Gate Bipolar Transistor With Diffusion Remnant Layer

Negative Differential Resistance with Ultralow Peak-to-Valley Voltage Difference in Td-WTe 2 /2H-MoS 2 Heterostructure

Negative differential resistance based on phase transformation

Negative differential resistance in multilayer MoTe<inf>2</inf> FET

Modulation of Negative Differential Resistance in Black Phosphorus Transistors

Design and Application of A Depletion-Mode Njfet in A High-Voltage Bicmos Process

Oxide Semiconductor Heterojunction Transistor with Negative Differential Transconductance for Multivalued Logic Circuits

A Self-Aligned Double-Gate Mos Transistor Technology with Individually Addressable Gates

Junctionless Negative‐Differential‐Resistance Device using 2D Van‐Der‐Waals Layered Materials for Ternary Parallel Computing

An Ultra-Low Specific ON-Resistance LDMOST With Self-Driven Split Gate

Negative-to-Positive Differential Resistance Transition in Ferroelectric FET: Physical Insight and Utilization in Analog Circuits

Z2-FET used as 1-transistor high-speed DRAM

S-type Negative Differential Resistance in Semiconducting Transition-Metal Dichalcogenides

Phosphorene/rhenium disulfide heterojunction-based negative differential resistance device for multi-valued logic

An Unusual Mechanism for Negative Differential Resistance in Ferroelectric Nanocapacitors: Polarization Switching-Induced Charge Injection Followed by Charge Trapping.

Investigation of negative differential resistance in metal-edge-contact MoS2 field effect transistor