Abstract:We developed a new platform that enables in-situ four-probe electronic measurements, in-situ three-probe field-effect measurements, nanomanipulation, and in-situ modification of nanodevices inside a transmission electron microscope (TEM). The platform includes a specially designed chip-holder and a silicon (Si) chip with suspended metal electrodes. The chip-holder can hold one Si chip with a size up to 3 mm x 3 mm and provides four electrical connections that can be connected to the micrometer-sized electrodes on the Si chip by wire-bonding. The other side of the electrical connections on the chip-holder is connected to the electronic instruments outside the TEM through a commercial Nanofactory SPM-TEM holder. The Si chip with suspended metal electrodes on one of its edges was fabricated by lithography and wet etching. Carbon nanotubes (CNTs), InAs nanowires, and tungsten disulfide nanowires were placed to stride over and connect to the suspended electrodes on the Si chip by nanomanipulations inside a scanning electron microscope (SEM). By using the platform, I-V curves of an individual single-walled CNT connecting to four electrodes were in-situ measured between any two of the four suspended electrodes, and a high-resolution TEM image of the same CNT was obtained. Furthermore, four-terminal I-V measurement on an InAs nanowire was achieved on this platform, and with a movable probe used as a gate electrode, field-effect measurement on the same InAs nanowire device was accomplished in SEM. In addition, by using the movable probe on the SPM-TEM holder, we could further in-situ modify nanomaterial and nanodevices. The present work demonstrates a method that allows a direct correlation between the atomic-level structure and the electronic property of nanomaterials or nanodevices whose structure can be further modified in-situ.

Construction of a novel in-situ measurement system combining SEM with a STM-TEM holder

A platform for in-situ multi-probe electronic measurements and modification of nanodevices inside a transmission electron microscope.

A novel scanning tunneling microscopy for long range and high aspect ratio measurement

Fabrication and Electric Measurements of Nanostructures Inside Transmission Electron Microscope

In Situ Device-Level TEM Characterization Based on Ultra-Flexible Multilayer MoS2 Micro-Cantilever

Long Range And Accurate Measurement Of Deep Trench Microstructures By A Specialized Scanning Tunneling Microscope

Development of Micro-Four-point Probe in a Scanning Tunneling Microscope for in Situ Electrical Transport Measurement.

Electrical, Optical and Ionic Probe Inside Transmission Electron Microscope

Design and test of the nanostructure-reaccessible UHVSTM system

Scanning Tunneling Microscopy-Basedin Situmeasurement of Fast Tool Servo-Assisted Diamond Turning Micro-Structures

Scanning Tunneling Microscopy-Based in Situ Measurement of Fast Tool Servo-Assisted Diamond Turning Micro-Structures

In-situ manipulating,fabricating and measuring nanostructures inside SEM

Development of in Situ Optical–electrical MEMS Platform for Semiconductor Characterization

Nanofabrication of the gold scanning probe for the STM-SECM coupling system with nanoscale spatial resolution

Four-Probe Scanning Tunnelling Microscope with Atomic Resolution for Electrical and Electro-Optical Property Measurements of Nanosystems

Construction of Molecular Beam Epitaxy and Multi-Probe Scanning Tunneling Potentiometry Combined System

In situ transmission electron microscope studies on one-dimensional nanomaterials: Manipulation, properties and applications

Large-area profile measurement of sinusoidal freeform surfaces using a new prototype scanning tunneling microscopy

Semi-custom Methodology to Fabricate Transmission Electron Microscopy Chip for in Situ Characterization of Nanodevices and Nanomaterials

Dual-Servo Mechanism of STM for Measurement of Sub Millimeter Deep Trench Structures

A Novel Atomically Resolved Scanning Tunneling Microscope Capable of Working in Cryogen-Free Superconducting Magnet