Abstract:We developed a new platform that enables in-situ four-probe electronic measurements, in-situ three-probe field-effect measurements, nanomanipulation, and in-situ modification of nanodevices inside a transmission electron microscope (TEM). The platform includes a specially designed chip-holder and a silicon (Si) chip with suspended metal electrodes. The chip-holder can hold one Si chip with a size up to 3 mm x 3 mm and provides four electrical connections that can be connected to the micrometer-sized electrodes on the Si chip by wire-bonding. The other side of the electrical connections on the chip-holder is connected to the electronic instruments outside the TEM through a commercial Nanofactory SPM-TEM holder. The Si chip with suspended metal electrodes on one of its edges was fabricated by lithography and wet etching. Carbon nanotubes (CNTs), InAs nanowires, and tungsten disulfide nanowires were placed to stride over and connect to the suspended electrodes on the Si chip by nanomanipulations inside a scanning electron microscope (SEM). By using the platform, I-V curves of an individual single-walled CNT connecting to four electrodes were in-situ measured between any two of the four suspended electrodes, and a high-resolution TEM image of the same CNT was obtained. Furthermore, four-terminal I-V measurement on an InAs nanowire was achieved on this platform, and with a movable probe used as a gate electrode, field-effect measurement on the same InAs nanowire device was accomplished in SEM. In addition, by using the movable probe on the SPM-TEM holder, we could further in-situ modify nanomaterial and nanodevices. The present work demonstrates a method that allows a direct correlation between the atomic-level structure and the electronic property of nanomaterials or nanodevices whose structure can be further modified in-situ.

Development of Micro-Four-point Probe in a Scanning Tunneling Microscope for in Situ Electrical Transport Measurement.

Development of a New Microscopic Four-Point AFM Probe for the Measurement of Local Electrical Conductivity

Fabrication of a microscopic four-point probe and its application to local conductivity measurement

Four-Probe Scanning Tunnelling Microscope with Atomic Resolution for Electrical and Electro-Optical Property Measurements of Nanosystems

G030083 Four-point Atomic Force Microscope Probe for Imaging the Electrica1 Characteristics of Materials

Microscopic Four-Point Atomic Force Microscope Probe Technique for Local Electrical Conductivity Measurement

Development and Performance of the Nanoworkbench: A Four Tip STM for Electrical Conductivity Measurements Down to Sub-micrometer Scales

Long Range And Accurate Measurement Of Deep Trench Microstructures By A Specialized Scanning Tunneling Microscope

A novel scanning tunneling microscopy for long range and high aspect ratio measurement

Double-Tip Scanning Tunneling Microscope for Surface-Analysis

Measurement of Local Electrical Conductivity by Four-Point Probe Atomic Force Microscope Technique

Construction of a novel in-situ measurement system combining SEM with a STM-TEM holder

A platform for in-situ multi-probe electronic measurements and modification of nanodevices inside a transmission electron microscope.

Large-area profile measurement of sinusoidal freeform surfaces using a new prototype scanning tunneling microscopy

Scanning Tunneling Microscopy-Based in Situ Measurement of Fast Tool Servo-Assisted Diamond Turning Micro-Structures

Scanning Tunneling Microscopy-Basedin Situmeasurement of Fast Tool Servo-Assisted Diamond Turning Micro-Structures

NOVEL AFM PROBE FOR LOCAL CONDUCTIVITY MEASUREMENT

Rapid Measurement Of A High Step Microstructure With 90 Degrees Steep Sidewall

Electrochemical Preparation of STM Probes for High Aspect Ratio Nanometrology

An in Situ Electrical Transport Measurement System under Ultra-High Vacuum

Recent Progress on the Scanning Tunneling Microscopy and Spectroscopy Study of Semiconductor Heterojunctions