Study on Optical Properties of P-Type MgZnO Fabricated by MOCVD

DONG Xin,ZHAO Wang,ZHANG Bao-lin,LI Xiang-ping,DU Gou-tong
2008-01-01
Chinese Journal of Luminescence
Abstract:p-type MgxZn1-xO film was grown on semi-insulating GaAs substrate by metal-organic chemical vapor deposition. The arsenic atoms, which acted as the acceptors in the film, were diffused from the substrates when the film was annealed in oxygen ambient at 700 ℃. And the cause of formation about p-type film was also discussed. The measurements, such as the XPS, HALL, XRD and PL were carried out. The existence of As in the film was proved by XPS. The resistivities and carrier concentrations of the film were measured by HALL effect measurement and the effect of anneal in the oxygen on them were discussed. The (002) peak in the XRD pattern and the NBE peak in the PL spectra of n-MgZnO were both stronger than that of p-MgZnO. The reason was believed that the new defects were introduced by As diffusion.
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