Abstract:Electrical and thermal transport in silicon germanium superlattice nanostructures has received extensive attention from scientists for understanding carrier properties at the nanoscale, and the figure-of-merit (ZT) reported in such structures has inspired engineers to develop cost-effective waste heat recovery systems. In this paper, the thermoelectric transport properties of the silicon-based superlattice- and anti-superlattice-nanocrystalline heterostructures are systematically studied by first-principles and molecular dynamics simulations combined with the Boltzmann transport theory. The thermal conductivity, which is thought to be the essential bottleneck for bulk crystalline Si to gain a high ZT value, of such structures is found to be reduced by two orders of magnitude and reaches a level far below the amorphous limit of Si. This is achieved due to the extremely strong phonon-boundary scattering at both grain boundaries and Si-Ge interfaces, which will lead to the phonon mean free path being much smaller than the grain size (Casmir limit): for instance, the dominant phonons are in range of 0.5 to 3 nm for the heterostructures with a grain size of around 8 nm. Meanwhile, the power factor can be preserved at the level comparable to bulk crystalline because of the quantum confinement effect, which resulted from the conduction band minima converge, reduction of band gap, and the short mean free path of carriers. As a result, the ZT of such superlattice based nanomembranes can reach around 0.3 at room temperature, which is two orders of magnitude higher than the bulk crystalline case. The corresponding bulk superlattice-nanocrystalline heterostructures possess a ZT value of 0.5 at room temperature, which is superior to all other bulk silicon-based thermoelectrics. Our results here show that nanostructuring the superlattice structure can further decrease the thermal conductivity while keeping the electrical transport properties at the bulk comparable level, and provides a new strategy for enhancing the thermoelectric performance of the silicon-based nanostructures.

Effect of Superlattice on The Thermal Resistance of Aluminum and Silicon Interface

Thermal Interface Conductance between Aluminum and Silicon by Molecular Dynamics Simulations

Super-Suppression of Long Phonon Mean-Free-Paths in Nano-engineered Si due to Heat Current Anticorrelations

The effect of interface angle on the thermal conductivity of Si/Ge superlattices

Two-Dimensional Molecular Dynamics Simulation of the Thermal Conductance of Superlattices

First-principles and Molecular Dynamics Study of Thermoelectric Transport Properties of N-type Silicon-Based Superlattice-Nanocrystalline Heterostructures

A comparative study of interfacial thermal conductance between metal and semiconductor

Thermal transport mechanism of AlN/SiG/3C-SiC typical heterostructures

Thermal Boundary Conductance Enhancement of the Si/Diamond Interface via Atomic Transition Strategy

Giant Thermal Transport Tuning at a Metal/Ferroelectric Interface

Enhanced thermal conduction through nanostructured interfaces

Thermal Boundary Conductance of Direct Bonded Aluminum Nitride to Silicon Interfaces

Effect of the Alloyed Interlayer on the Thermal Conductance of Al/GaN Interface

Effect of the thickness of amorphous silicon intermediate layer on the thermal transport of silicon/diamond interface

Thermal Conductivity Measurements of Ultra-Thin Single Crystal Silicon Films Using Improved Structure

Heat transfer enhancement of N-Ga-Al semiconductors heterogeneous interfaces

In‐situ Observation of Atomic Diffusion at Epitaxial Al/Si Interface

Tunable Anisotropic Lattice Thermal Conductivity in One-Dimensional Superlattices from Molecular Dynamics Simulations

Annealing effect on SiNx/SiO2 superlattice with ultrathin sublayer fabricated using plasma-enhanced atomic layer deposition

Thermalization Effect in semiconductor Si, and metallic silicide NiSi2, CoSi2 by using Non-Adiabatic Molecular Dynamics Approach

Enhancing interfacial thermal conductance of Si/PVDF by strengthening atomic couplings