Abstract:Vanadium oxynitride (VN x O y , x+y=1) is a metallic compound between vanadium oxides (VO, V 2 O 3 , V 2 O 5 ) and vanadium nitride (VN) which would have interesting properties and functions that potentially can be supplied for different applications. In this study, vanadium nitride and oxynitride thin films were obtained by reactive magnetron sputtering using vanadium targets, Ar as plasma carrier, and a mix of N 2 and O 2 as reactive gas. The ratio of mass flow between the two gases is maintained around O 2 :N 2 =1:20 during the process. To obtain crystalline phases of oxynitrides a post rapid thermal annealing (RTP) in Ar atmosphere at 600oC and 700oC for 5 minutes was done. The purpose of the study is to define the effect of the magnetron sputtering parameters, such as reactive gas flow rates, and annealing temperature on the composition, microstructure, and optical properties of the obtained vanadium oxynitride thin films. The characterization of obtained films includes the examination of thickness and morphology by the surface profiler and SEM; identifying crystal structures and further microstructural vibration modes of molecular polarizability by X-ray diffraction and Raman spectroscopy, respectively; evaluation of the chemical composition of films by XPS analysis; assessing of optical transmittance, reflectance, and absorbance by the UV-visible- NIR spectrometer. Experimental data reveal that the annealed films can be oxynitrides when the oxygen flow rate is below 0.25 sccm and the ratio of oxygen/nitrogen ≤1/20. The annealed vanadium oxynitride films in terms of their properties are closer to vanadium nitrides than to oxides: more metallic than semi-conductive with dark appurtenance and high optical absorbance across the spectrum between 200 and 900 nm. The optical absorbance reaches almost 90% around 300 nm and then slowly reduces to 70% at 900 nm. Thus, these films could be good optical shields. For practical usage, the deposition of O 2 :N 2 =1/20, O 2 <0.25 sccm, and 600oC annealing are recommended because of the truly low transmittance (<10%) through films.

Effect of O2/(O2+Ar) Ratios on the Type of Defects in ZnO-0.25mol% V2O5 Thin Films

Microstructure and Optical Properties of ZnO Films Deposited by Radio-frequency Reactive Magnetron Sputtering

Influence of O_2/Ar Flow Ratio on Microstructures and Photoluminescence of ZnO Films

The Effects of Oxygen Partial Pressure and Substrate Temperature on the Structural and Optical Properties of Zno Films

Effect of Solution Concentrations on Crystal Structure, Surface Topographies and Photoluminescence Properties of ZnO Thin Films

Influence of Ar/O2 Gas Ratios on the Crystal Quality and Band Gap of Zn1−xCdxO Thin Films

The effects of intrinsic defects on the structural and optical properties of ZnO thin film prepared via a sol-gel method

Reactive sputtered ZnO thin films: Influence of the O2/Ar flow ratio on the oxygen vacancies and paramagnetic active sites

Microstructure and photoluminescence study of vanadium-doped ZnO films

Structural evolution of ZnO films deposited by rf magnetron sputtering on glass substrate

Microstructure and Electrical Properties of Al-doped ZnO Thin Films

Effects of Oxygen Source Ionization on the Growth and Properties of MOCVD ZnO Material

Oxygen Pressure Manipulations on the Metal–insulator Transition Characteristics of Highly (0 1 1)-Oriented Vanadium Dioxide Films Grown by Magnetron Sputtering

(Digital Presentation) Fabrication and Characterization for Vanadium Oxynitride Thin Films By Magnetron Sputtering

Role of oxygen vacancies in V-doped ZnO diluted magnetic semiconductors

Oxidants in ZnO Thin Film Growth by LP-MOCVD

Geometrical Anatomy for Oxygen Vacancies in Epitaxial Hf0.5Zr0.5O2 Films Grown via Atomic Layer Deposition

Comparative Study of the Effect of H2 Addition on ZnO Films Grown by Different Zinc and Oxygen Precursors

The Effect on the Wettability by the Crystal Quality of ZnO Nanostructure

Effect of O_2 Flow Rate on the Properties and Growth of ZnO Thin Films

The Microstructure, Stoichiometric Ratio and Room Temperature Ferromagnetic Properties of V-doped ZnO Films Deposited at Different Substrate Temperatures