Microstructure and photoluminescence study of vanadium-doped ZnO films

J T Luo,X Y Zhu,B Fan,F Zeng,F Pan
DOI: https://doi.org/10.1088/0022-3727/42/11/115109
2009-01-01
Abstract:Zn1-xVxO films (x = 0, 1.3, 1.9, 2.6, 3.5, 4.3 and 6.2 at%) were prepared on glass substrates via the direct current reactive magnetron co-sputtering method. The microstructure, band gap, photoluminescence and Raman scattering of these films have been systematically investigated. The structural and chemical state characterizations indicate that the crystallinity of Zn1-xVxO films (x <= 2.6 at%) can be improved by V incorporation into the ZnO wurtzite lattice, but excess V will precipitate as V clusters when x >= 4.3 at%, resulting in the deterioration of crystal quality. The defects in Zn1-xVxO films (x <= 2.6 at%) can be suppressed by V doping, which induces the enhancement of the near band edge (NBE) emission. However, when x >= 4.3 at%, defects adjacent to the V dopant quench the NBE emission. On the other hand, the band gap of the films gradually increases with the increase in V concentration, which is accompanied by the blue shift of the NBE emission.
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