Effect of Heating Power Fluctuation on Sapphire Crystal Grown by SAPMAC Method

XU Cheng-hai,DU Shan-yi,ZHANG Ming-fu,MENG Song-he,ZUO Hong-bo,TAN Shu-ping,G.Benik
DOI: https://doi.org/10.3969/j.issn.1000-985x.2007.02.006
2007-01-01
Abstract:According to the theory of the temperature wave's spread in the melt medium,combine SAPMAC sapphire crystal growth technical characteristic,this paper studied the effectheating power fluctuation caused by temperature jump on crystal growth.Studies suggested that it has greater thermal diffusion coefficient because alumina high-temperature melt,temperature wave was relatively apt to pass to solid-liquid interface,so that caused the temperature of the interface to gurgitations;the gurgitations can make crystal defects,such as the bubble,void.According to the transmission and decay law of temperature wawe in the alumina melt,we proposed that improving the system hot inertia,increase interface melt parcel layers thickness etc to the inhibitory measure.
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