Abstract:The distribution of intrinsic point defects, comprising vacancies and self-interstitials, plays a pivotal role in determining the quality and properties of silicon wafers, with profound implications for their applications in the semiconductor industry. Previous research posits that the dominant defect type in Czochralski (Cz) Si can be manipulated by adjusting the ratio of the pulling rate (V) to the axial thermal gradient (G). The critical value of V /G establishes the equilibrium between vacancies and self-interstitials. However, conventional theories often consider ( V /G ) (crit) to be a constant based on the assumption of thermal equilibrium. In this study, we present evidence that the formation and diffusion of the intrinsic point defects are influenced by thermal stress, rendering ( V/ G ) (crit) dependent on thermal stress distribution. Through a combination of first-principles calculations and finite element simulations, we establish a quantitative theoretical model that considers thermal stress. Based on this model, the impact of thermal stress on the defect distribution during Cz Si growth and the value of ( V/ G ) (c rit) is elucidated. Our findings are validated through experimental growth of Cz Si and analytical testings. This work not only contributes to a deeper understanding of the microscopic mechanisms governing defect dynamics in Si but also advances Cz Si growth technology, ultimately enhancing the quality of the resultant Si wafers.

Impact of emissivity of a crystal on temperature distribution in a silicon crystal during growth as a function of impurity concentration

Silicon crystal growth from the melt: Analysis from atomic and macro scales

Thermal History Effect on the Nucleation of Oxygen Precipitates in Germanium Doped Cz-silicon Studied by High-Energy X-ray Diffraction

Sample Thickness Effect Of Thermal Vibration Correction Within X-Ray Dynamical Theory For Germanium-Doped Silicon

On the Assumed Impact of Germanium Doping on Void Formation in Czochralski-Grown Silicon

Oxygen and Nitrogen Transfer in Furnaces in Crystal Growth of Silicon by Czochralski and Directional Solidification Processes

Enhanced Oxygen Precipitation In Neutron-Irradiated Nitrogen-Doped Czochralski Silicon Crystal

Investigation of Oxygen Behavior under Different Melt Flow, Diffusion Boundary Layer, and Crystal-Melt Interface in a 300 mm Silicon Crystal Growth with Cusp Magnetic Field

Crystal-originated Particles in Germanium-Doped Czochralski Silicon Crystal

Grown-In Defects in Heavily Boron-Doped Czochralski Silicon

Study of Effects of Varying Parameters on the Dislocation Density in 200 Mm Sic Bulk Growth

Oxygen Precipitation in Ge-doped Czochralski-silicon at 900 °C Investigated by in Situ High Energy X-Ray Diffraction

Characterization of the Interface Region During the Agglomeration of Silicon Nanocrystals in Silicon Dioxide

Distribution of the Electrical Resistivity of a N-Type 4H-Sic Crystal

Diameter-Controlled Czochralski Growth of Silicon Crystals

Crystal Growth and Oxygen Precipitation Behavior of 300 Mm Nitrogen-Doped Czochralski Silicon

Recognition and Imaging of Point Defect Diffusion, Recombination, and Reaction During Growth of Czochralski-Silicon Crystals

High temperature nucleation of oxygen precipitates in Germanium-doped Czochralski silicon

Impact of Thermal Stress on Intrinsic Point Defect in Czochralski Crystal Growth: Developing a Quantitative Model for Defect Formation and Distribution

Impurity concentration dependent electrical conduction in germanium crystal at low temperatures

Effect of Crystal Rotation on Melt Convection and Resistivity Distribution in 200 mm Floating Zone Silicon Single Crystal Growth