Silicon crystal growth from the melt: Analysis from atomic and macro scales

K. Kakimoto,L. Liu,T. Kitashima,A. Murakawa,Y. Hashimoto
DOI: https://doi.org/10.1002/crat.200410343
2005-04-01
Crystal Research and Technology
Abstract:Abstract The effect of impurity concentration on thermal conductivity of natural and isotope silicon by using equilibrium molecular dynamics simulation is investigated. It was found that the concentrations of the impurities such as boron, phosphor and arsene play an important role in the propagation of phonons in silicon crystals. It was also clarified that a mass difference of impurities and host crystals results in degradation of thermal conductivity of silicon. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
crystallography
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