Abstract:In this work, a unique approach in experiments was carried out by a pulsed DC sputtering for the 60/30-min process in one-step and multi-step (two- and four-step) deposition to obtain trends of residual stress and film properties of aluminum nitride (AlN). Film characteristics comparison between one-step and multi-step deposition was used to study the correlation among film crystallite orientation, residual stress, and film features. The thickness, microstructure, residual stress, and crystallite status of AlN films were examined by scanning electron microscopy (SEM), X-ray diffraction (XRD), Fourier transform infrared (FTIR) spectroscopy, and atomic force microscopy (AFM). The results show that the films have different stress characteristics in different microstructures when processed at the same amount of time in different deposition intervals. The increase in the degree of ion bombardment and induced substrate temperature raised leads to the interpretation of different microstructural changes in films. In this investigation, the film with thickness about 1300 nm for one-step deposition has a surface roughness of 2.67 nm, the grain size of 65.1 nm, and residual stress of 1575 MPa. In the four-step deposition, these values were reduced to 2.46 nm, 51.4 nm, and 841 MPa, respectively. In situ optical emission spectroscopy (OES) data were collected during plasma deposition of selected dominant wavelengths of N2 (315 and 336 nm) and Al (394 and 396 nm) for large-scale data analysis. Based on a cross-validation test executed from OES data preprocessing, the methodology with the principal component analysis (PCA) and value of microstructure characteristics (VMC) algorithm demonstrated that this unique multi-step deposition technique can provide a good stress gradient control from microstructural analysis and can effectively classify film characteristics in AlN film deposition.

Component Analysis of the AlN Thin Films

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Study of preparation of AlN Thin Films for FBAR Application by RF Sputtering

XPS Study of Impurities in Si‐doped AlN Film

The optical properties and applications of AlN thin films prepared by a helicon sputtering system

AlN films prepared on 6H-SiC substrates under various sputtering pressures by RF reactive magnetron sputtering

Preparation of Aln Thin Films for Film Bulk Acoustic Resonator Application by Radio Frequency Sputtering

A multi-step deposited AlN films in a DC pulsed sputtering and film characteristics classification with principal component analysis of OES data

Surface chemistry in atomic layer deposition of AlN thin films from Al(CH3)3 and NH3 studied by mass spectrometry

Spectroscopic Characterization of the Plasma Generated During the Deposition of AlxGa1−xN Films by Pulsed Laser Co-Ablation of Al and GaAs Targets in Electron Cyclotron Resonance Nitrogen Plasma

Investigation of chemical etching of AlN film with different textures by x-ray photoelectron spectroscopy

Studies on the Effects of the Different Substrates on the Structures of AlN Thin Films

Characterization of aluminum nitride thin films by ion beam analysis techniques

Studies of the Structure and Surface Roughness of AlN Thin Films

Influence of thickness on field emission characteristics of AlN thin films

Nitrogen flow rate dependent atomic coordination, phonon vibration and surface analysis of DC Magnetron sputtered Nitrogen rich-AlN thin films

Effect of nitrogen flow ratio on the structure and optical properties of AlN film

Influence of sputtering parameters on structures and residual stress of AlN films deposited by DC reactive magnetron sputtering at room temperature

Characterization of Ti-Al-N Films Deposited by Cathodic Vacuum Arc with Different N2 Partial Pressure

Influence of AlN Ceramic Substrate Surface Treatment on Thin Film Adhesion

Structural Properties and Nanoindentation of Aln Films by A Filtered Cathodic Vacuum Arc at Low Temperature