Abstract:In this work, a unique approach in experiments was carried out by a pulsed DC sputtering for the 60/30-min process in one-step and multi-step (two- and four-step) deposition to obtain trends of residual stress and film properties of aluminum nitride (AlN). Film characteristics comparison between one-step and multi-step deposition was used to study the correlation among film crystallite orientation, residual stress, and film features. The thickness, microstructure, residual stress, and crystallite status of AlN films were examined by scanning electron microscopy (SEM), X-ray diffraction (XRD), Fourier transform infrared (FTIR) spectroscopy, and atomic force microscopy (AFM). The results show that the films have different stress characteristics in different microstructures when processed at the same amount of time in different deposition intervals. The increase in the degree of ion bombardment and induced substrate temperature raised leads to the interpretation of different microstructural changes in films. In this investigation, the film with thickness about 1300 nm for one-step deposition has a surface roughness of 2.67 nm, the grain size of 65.1 nm, and residual stress of 1575 MPa. In the four-step deposition, these values were reduced to 2.46 nm, 51.4 nm, and 841 MPa, respectively. In situ optical emission spectroscopy (OES) data were collected during plasma deposition of selected dominant wavelengths of N2 (315 and 336 nm) and Al (394 and 396 nm) for large-scale data analysis. Based on a cross-validation test executed from OES data preprocessing, the methodology with the principal component analysis (PCA) and value of microstructure characteristics (VMC) algorithm demonstrated that this unique multi-step deposition technique can provide a good stress gradient control from microstructural analysis and can effectively classify film characteristics in AlN film deposition.

Minimizing film residual stress with in situ OES big data using principal component analysis of deposited AlN films by pulsed DC reactive sputtering

Residual stress classification of pulsed DC reactive sputtered aluminum nitride film via large-scale data analysis of optical emission spectroscopy

Minimizing residual stress of aluminum nitride (AlN) thin films using multi-step deposition of DC pulsed sputtering

A multi-step deposited AlN films in a DC pulsed sputtering and film characteristics classification with principal component analysis of OES data

Machine Learning Assisted Classification of Aluminum Nitride Thin Film Stress via In-Situ Optical Emission Spectroscopy Data

Preparation of AIN Thin Film by DC Sputtering on SiO2/Si and Analysis of Microstructure

Residual Stress of AlN Films RF Sputter Deposited on Si(111) Substrate

Impact of Pulse Parameters of a DC Power Generator on the Microstructural and Mechanical Properties of Sputtered AlN Film with In-Situ OES Data Analysis

In-situ real-time evolution of intrinsic stresses and microstructure during growth of cathodic arc deposited (Al,Ti)N coatings

RESIDUAL STRESSES IN OBLIQUE INCIDENCE DEPOSITED ALUMINA THIN FILM

Influence of sputtering parameters on structures and residual stress of AlN films deposited by DC reactive magnetron sputtering at room temperature

Study of preparation of AlN Thin Films for FBAR Application by RF Sputtering

Influence of Nitrogen Content and Bias Voltage on Residual Stress and the Tribological and Mechanical Properties of CrAlN Films

Analysis of Residual Stress of Gradient TiAlN Films Prepared by Arc Ion Plating

Preparation of Aln Thin Films for Film Bulk Acoustic Resonator Application by Radio Frequency Sputtering

Quantitative Study of High-Frequency Fatigue Hole-Edge Stresses in Nickel-Based Single-Crystal Superalloy

Residual Stress Measurement in Thin Films Using a Slitting Method with Geometric Phase Analysis under a Dual Beam (FIB/SEM) System

Film thickness effect on texture and residual stress sign transition in sputtered TiN thin films

Effects of crystal orientation, substrate type, and substrate temperature on residual stress of AlN thin films deposited by different deposition methods

Analysis of Low Frequency SiN Film on the Effect of Stress Level and Deposition Parameters

Simulation of Thermal Stress in AlN Thin Film