Effect of Sputtering Process on Deposition Rate and Dielectrical Properties of Ba0.5Sr0.5TiO3 Thin Films

LIN Ming-tong,CHEN Guo-rong,YANG Yun-xia,XIAO Tian,LOU Jun-hui
DOI: https://doi.org/10.3969/j.issn.1002-0322.2005.06.009
IF: 4
2005-01-01
Vacuum
Abstract:Ferroelectric/dielectric BST(Ba_xSr_(1-x)TiO_3)thin films have broadly prospective applications in new technology fields,such as microelectronics,integrated optics and photo electronics.The Ba_(0.5)Sr_(0.5)TiO_3 thin films about 700 nm thick were prepared by rf magnetron sputtering process,using an Al/BST/ITO architecture to investigate the impact of sputtering power,gas pressure,O_2/(Ar+O_2) ratio and substrate temperature on the deposition rate and dielectric properties of the BST thin films.An optimal process was thus concluded from the investigation results with XRD,XPS and SEM used to analyze the crystalline phase,composition and microstructure of the films deposited by the optimum process.
What problem does this paper attempt to address?