Effects of Al2o3-Doping on the Microstructure and Dielectric Properties of Ba4sm9.33ti18o54 Ceramics

Yao Xiao-Gang,Lin Hui-Xing,Jiang Shao-Hu,Chen Wei,Luo Lan

DOI: https://doi.org/10.3724/sp.j.1077.2012.12192

IF: 1.292

2012-01-01

Journal of Inorganic Materials

Abstract:Ba4Sm9.33Ti18O54 (BST) center dot xwt%Al2O3 (x=0-1.5) microwave dielectric ceramics were prepared by solid state reaction method. The effects of Al2O3 on the microstructure and dielectric properties of BST ceramics were studied. With the increasing amount of Al2O3, the Sm2Ti2O7 phase observed in the undoped BST ceramics disappeared and new phases BaTi4O9 (x >= 0.6) and BaAl2Ti5O14 (x >= 1.0) were found in BST ceramics successively as identified by SEM and EDS analysis. It was showed that the disappearance of Sm2Ti2O7 phase and the formation of a small amount of BaTi4O9 phase significantly improved the Qf values of the BST ceramics, at the cost of dielectric constant. Further increasing the amount of Al2O3 produced more BaTi4O9 led to a slight decrease in Qf values. However, both the dielectric constant and Qf values were deteriorated with the appearance of BaAl2Ti5O14. BST ceramics with 0.6wt% Al2O3 doped sintered at 1340 degrees C for 3 h obtained the best dielectric properties: epsilon(r)=74.7, Qf =10980 GHz, tau(f) = -11.8x10(-6)/degrees C.