Microstructure and Properties of ZrO 2 -, TiO 2 -Doped Ca–Si–B Based Ceramics
Ming He,Huaiwu Zhang,Shuren Zhang,Jing Wan
DOI: https://doi.org/10.1007/s10854-012-0655-3
2012-01-01
Journal of Materials Science Materials in Electronics
Abstract:The microstructure, sintering and dielectric properties of ZrO2-, TiO2-doped Ca–Si–B based ceramics prepared by solid-phase process were investigated, and the effects of ZrO2, TiO2 content on these performances were analyzed. The Ca–Si–B based ceramics without additive (ZrO2 or TiO2) showed a high sintering temperature (1,100 °C) and had the dielectric properties: dielectric constant (εr) of 8.38, dielectric loss (tanδ) of 1.51 × 10−3 at 1 MHz, and volume density of 2.47 g/cm3. The addition of ZrO2, TiO2 was revealed to lower the sintering temperature of Ca–Si–B based ceramics to 1,000 °C and enhance the sintering and dielectric properties: ρ = 2.61 g/cm3, εr = 5.85, tanδ = 1.59 × 10−4 (1 MHz) with ZrO2 addition, and ρ = 2.65 g/cm3, εr = 6.12, tanδ = 6.4 × 10−4 (1 MHz) with TiO2 addition, which are superior to the pure Ca–Si–B. The results show that ZrO2, TiO2 as nucleating agents, are conducive to the precipitation of crystals, thus decrease the sintering temperature and improve the dielectric properties of Ca–Si–B based ceramics.