Microstructure and Electrical Properties of Al<sub>2</sub>O<sub>3</sub>-Doped Ba<sub>0.9</sub>Ca<sub>0.1</sub>Ti<sub>0.8</sub>Zr<sub>0.2</sub>O<sub>3</sub> Based Dielectric Ceramics

Yue Ping Wang,Xiao Hui Wang,Zhi Jian Peng,Long Tu Li
DOI: https://doi.org/10.4028/www.scientific.net/kem.602-603.734
2014-01-01
Key Engineering Materials
Abstract:Al2O3-doped Ba0.9Ca0.1Ti0.8Zr0.2O3(short for BCTZ) based dielectric ceramics were fabricated by sintering samples at 1300°C for 2h with conventional ceramic processing method. The microstructure and electrical properties of the as-prepared samples were investigated. X-ray diffraction analysis showed that after the addition of Al2O3with the amount designed in this study, no new phase was examined in the detection limit. Through scanning electron microscopy it was found that the doping of Al2O3can help the growth of BCTZ grains, and the relative permittivities of the samples. The result of electrical properties indicated that the resistance and the break voltage of the samples could be improved to some extent with appropriate doping amount of Al2O3resulting in the highest dielectric constant ~17000, low dielectric loss <10%, and highest break voltage 8.4 kV/mm, respectively.
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