Abstract:We report synthesis of hydrogenated nanocrystalline silicon (nc-Si:H) thin films by using conventional plasma enhanced chemical vapor deposition (PE-CVD) system from gas mixture of pure silane (SiH4) and hydrogen (H2). We investigated the effect of RF power on structural, optical and electrical properties using various characterization techniques including Raman spectroscopy, FTIR spectroscopy, UV–visible spectroscopy etc. Low angle XRD and Raman spectroscopy analysis revealed that the RF power in PE-CVD is a critical process parameter to induce nanocrystallization in Si:H films. The FTIR spectroscopy analysis results indicate that with increase in RF power the predominant hydrogen bonding in films shifts from Si–H to Si–H2 and (Si–H2)n bonded species bonded species. However, the bonded hydrogen content didn’t show particular trend with change in RF power. The UV–visible spectroscopy analysis shows that the band tail width (E04–ETauc) with increase in RF power. The defect density and Urbach energy also increases with increase in RF power. The highest dark conductivity (and lowest charge carrier activation energy) was obtained for the film deposited at RF power of 125 W indicating that 125 W is optimized RF power of our PE-CVD unit. At this optimized RF power nc-Si:H films with crystallite size ~3.7 nm having good degree of crystallinity (~86.7 %) and high band gap (ETauc ~ 2.01 eV and E04 ~ 2.58 eV) were obtained with a low hydrogen content (6.2 at.%) at moderately high deposition rate (0.24 nm/s).

The influence of RF power on the solid phase crystalli-zation of a-Si thin films

The Influence of Radio Frequency Power on the Characteristics of Carbon-Rich Hydrogenated Amorphous Silicon Carbide Films

Novel Sandwich Structure for Aluminum Induced Crystallization of Amorphous Silicon Thin Films at Low Temperature

Crystallization of amorphous silicon thin films: The effect of rapid thermal processing pretreatment

Influence of RF Power Density on the Nanocrystallization of Ar Diluted Si:H Thin Films Deposited by PECVD

The Nc-Si Films With Controlled Crystal Structure And Electrical Conductivity Via The Re-Crystallization Approach

Effect of Annealing on the Properties of Boron Doped Μc-Si：h by RF-PECVD

Thermal effect on RF sputtered SiC film

Influence of annealing on microstructures and photoluminescence of nano-composite silicon film

The Effect Of Thermal Annealing On Crystallization In A-Si : H/Sio2 Multilayers By Using Layer By Layer Plasma Oxidation

The Influence of Zirconium on the Crystallization Behavior and Electrical Properties of Cr–Si–Al Resistive Films

Nanocrystallization of a-Si:H thin films deposited by PECVD under low argon dilution

Structural properties of a-Si films and their effect on aluminum induced crystallization

Crystallization of As-Deposited Amorphous Silicon Films on Glass Prepared by Magnetron Sputtering with Different Substrate Biases and Temperatures

Study of XRD on Microcrystalline Silicon Thin Films Prepared by RF-PECVD

Influence of RF power on structural optical and electrical properties of hydrogenated nano-crystalline silicon (nc-Si:H) thin films deposited by PE-CVD

Modulation Effect of Plasma Power on Crystalline Volume Fraction of Silicon Films in the Phase Transition from A-Si:H to /spl Mu/c-Si:H

RF power dependence of the properties of n-type nanocrystalline silicon films deposited by a low-frequency inductively coupled plasma

Properties of Electric Transport in Crystallized Silicon Films under Different Annealing Temperatures

Microstructure and Electrical Characteristics of Cr–Si–Ni Films Deposited on Glass and Si (100) Substrates by RF Magnetron Sputtering

Fabrication of Microcrystalline Silicon Films by VHF-PECVD and Their Microstructure Study