Study on static electric shoke failure of GaAs based high power laser

Xin-zhu HUANG,Bi-feng CUI,Wei-ling GUO,Sha LI,Zhen-zhen KONG,Tian-xiao FANG,Shuai HAO
DOI: https://doi.org/10.3969/j.issn.1001-5078.2017.06.009
2017-01-01
Abstract:In order to determine the static damage of high power semiconductor laser,the static damage mechanism of high power semiconductor laser is studied.Firstly,the biases of-200,-600,-800,-1200 and +5000 V electrostatic discharge (ESD) were applied to GaAs-based high power laser diodes.The electrical and optical parameters of HPLD were measured after electrostatic discharge stressing.Secondly,the damage of the device was observed by using a microscope after etching the device.After applying reverse ESD,the I-V curve of the semiconductor laser had a obvious soft breakdown phenomenon and the optical output power decreased obviously.The reverse leakage current of-1200 V ESD device is 5883854.92 times of that with no ESD when it was working in 4 V.After applying forward ESD,the device has no obvious soft breakdown phenomenon,and the power drop is very small.After applying reverse ESD and etching gold electrode,device surface had obvious phenomenon of meltdown,while device surface hadn′t this phenomenon after applying forward ESD.Due to the different I-V characteristics and damage characterization between reserve ESD and forward ESD,it is inferred that the I-V characteristics of the device has no obvious change after applying the forward high instantaneous voltage and current.But the reverse high instantaneous voltage and current will lead to an obvious soft breakdown of I-V curve and meltdown phenomenon of device surface.This provides an effective criterion for the electrostatic damage.
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