Study on Displacement Damage Effects of Laser Diodes

HUANG Shaoyan,LIU Minbo,XIAO Zhigang,TANG Benqi,WANG Zujun,ZHANG Yong
DOI: https://doi.org/10.16818/j.issn1001-5868.2011.02.011
2011-01-01
Abstract:Based on the derivation of analytical formula,displacement damage test results and numerical simulation of displacement effects,the fluence dependences of threshold current,external differential quantum efficiency and I-V characteristics are analyzed in either case of defects as the non-radiative recombination centers and defects as the traps for majority carriers.The defects primarily act as non-radiative recombination centers in ordinary range of test fluence and induce the following results that the threshold current linearly increases with fluence,current at the low voltage area of I-V characteristics increases with fluence,however,the external differential quantum efficiency has little change.When the test fluence is high enough to induce evident majority carrier removal,the increase of the threshold current with fluence is no longer linear,meanwhile,the external differential quantum efficiency and the current at high voltage of I-V characteristics will decrease with fluence.
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