Integrated Circuit Interconnect Wire Temperature Distribution Model Considering Buffer Heat Transfer and Buffer Location Optimization Analysis under Nanometer Process Condition

Xin-sheng WANG,Liang HAN,Hai-long LIU,Ming-yan YU

DOI: https://doi.org/10.19304/j.cnki.issn1000-7180.2013.12.010

2013-01-01

Abstract:This paper analyzes the impact of temperature on the interconnect buffer insertion ,and proposes an interconnect temperature distribution new model considering the dielectrics ,vias ,and buffers heat transfer effect . Single and multi-layer interconnect temperature distributions are calculated using 45 nm process parameters based on the new model .The results show that the local interconnect line temperatures are affected a little by buffer heat transfer ,while the global interconnect lines are subject to significantly affected and lower 10 degrees Celsius than the dielectric heat transfer model .Moreover ,the temperature has a significant effect on buffer insertion locations . Considering the substrate temperature gradient distribution , the location changes more than 10% compared to uniform buffer insertion under 1 .5 mm interconnect wire length .