Technique and Structure for Testing Bonding Intension in Micron Scale

RUAN Yong,HE Xue-feng,ZHANG Da-cheng,WANG Yang-yuan
DOI: https://doi.org/10.3969/j.issn.1000-7180.2005.08.029
2005-01-01
Abstract:In the design and fabrication of MEMS devices, MEMS fabrication process based on Silicon is a main tech-nology, to which is deeply paid attention by researchers and industries. Because of the characters of MEMS devices, its bonding area is from micro area to milli-area, thus traditional methods to test bonding strength are not sufficient any more. Measuring the strength of that scale has become the choke point for MEMS development. We first defined a new way, a series of single crystal cantilever beam was taken to test max shear stress of bonding strength in micro area., the square bonding profile length from 6μm to 120μm, the calculated lateral shear forces that cause a lateral displacement of 1 micro at the free end are comparable from theory and solid element. the relative error is about 4.9% and this error is acceptable in engineering. Experimental results obtain a curve of torsional strength versus the bonding area, and the designer can use it to determine the bonding area according to the required torque for their MEMS devices.
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