Fabrication of single electron transistors as the readout circuits for terahertz detectors

Yongtao LIU,Xinxing LI,Zhipeng ZHANG,Jingyue FANG,Hua QIN,Shengwen YU
DOI: https://doi.org/10.11805/TKYDA201701.0015
2017-01-01
Abstract:Radio-Frequency Single-Electron-Transistor(RF-SET) allows for readout of sub-electroncharge with high speed.Hence,a RF-SET could be used as a readout circuit for superconducting terahertz single-photon detector which converts photons into charges.SETs could be fabricated on Silicon on Insulator(SOI) with good controllability and reproducibility.However,the current yield of SETs on SOI (about 30%) is not yet sufficient for realizing a detector array.In order to improve the yield,single-line exposure mode of Electron-Beam Lithography(EBL) is used to precisely define the width of tunneling barriers;and the etching gas in Inductively-Coupled Plasma(ICP) etching is optimized to realize good pattern transfer;oxidation of silicon is performed at a lower temperature to maintain the precision in the definition of SETs.Since the tunneling barriers are precisely controlled,the yield of SETs has been increased to 90%.Such a high yield makes it more practical to implement SETs as readout circuits in detector arrays.
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