Abstract:In this paper, based on the sequential irradiation of 40 MeV Si ions and Co-60 gamma ray, a direct evidence of the annealing effect of ionization damage on displacement damage in 2N2219 NPN bipolar junction transistors (BJTs) is investigated. Electrical parameters are measured using KEITHLEY 4200-SCS semiconductor characterization system during irradiation. The radiation induced defects are characterized by deep level transient spectroscopy (DLTS). The experimental results show that the degradation of current gain for the F2N2219 BJTs for the sum of the independent Co-60 gamma radiation and heavy ion irradiation is larger than that for the sequential irradiations, indicating the existence of significant synergistic effect. For lower fluence of 40 MeV Si ions, when the dose of Co-60 gamma ray is lower, the excess base current of the irradiated transistors by the sequential irradiation is less than one of the irradiated transistors by the independent 40 MeV Si ions. When fluence of 40 MeV Si ions is more than 6×l08/cm2, all the excess base current of the irradiated transistors by the sequential irradiation is less than one of the irradiated transistors by the independent 40 MeV Si ions. These results show that ionization damage on the transistors caused by the subsequent Co-60 gamma ray has an annealing effect on displacement damage caused by the 40 MeV Si ions. DLTS analyses show that the displacement defects especially in V2(-/0) centers caused by the 40 MeV Si ions are annealed due to the oxide charges induced by Co-60 gamma ray irradiations. Moreover, the fluence of the independent 40 MeV Si ions is the larger, the annealing effect of the displacement defects is the more obvious.

Effect of displacement radiation damage on bipolar junction transistors under various bias conditions

Radiation induced deep level defects in bipolar junction transistors under various bias conditions

Radiation Damage and Defects in NPN Bipolar Junction Transistors Irradiated by Silicon Ions with Various Energies

Dlts Studies of Bias Dependence of Defects in Silicon Npn Bipolar Junction Transistor Irradiated by Heavy Ions

Characteristic of Displacement Defects in N-P-N Transistors Caused by Various Heavy Ion Irradiations

Characteristics of Displacement Defects in PNP Transistors Caused by Heavy Ion Irradiation

Research on the Combined Effects of Ionization and Displacement Defects in NPN Transistors Based on Deep Level Transient Spectroscopy

Synergistic Effect of Ionization and Displacement Defects in Npn Transistors Induced by 40-Mev Si Ion Irradiation with Low Fluence

The equivalence of displacement damage in silicon bipolar junction transistors

Radiation Effects of 50-Mev Protons on PNP Bipolar Junction Transistors

Radiation Effects on Bipolar Junction Transistors Induced by 25 Mev Carbon Ions

A Technique for Characterizing Ionization and Displacement Defects in NPN Transistors Induced by 1-Mev Electron Irradiation

The Influence of Bias Conditions on Ionizing Radiation Damage of NPN and PNP Transistors?

Degradation mechanisms of current gain in NPN transistors

Incident particle range dependence of radiation damage in a power bipolar junction transistor

Evolution of Radiation Defects in NPN Bipolar Junction Transistors Irradiated by 3 MeV Protons

A Direct Evidence of the Annealing Effect of Ionization Damage on Displacement Damage in NPN Transistors

Research on interaction between displacement defects and oxide charge in NPN transistors based on deep level transient spectroscopy

Effect of Electric Field on Radiation Defects in NPN Transistors

Radiation defects studies on silicon bipolar junction transistor irradiated by Br ions and electrons

Radiation effects on bipolar junction transistors and integrated circuits produced by different energy Br ions