An Improved Model and Method of Calculating the VLSI Critical Area

马佩军,郝跃,寇芸
DOI: https://doi.org/10.3969/j.issn.1674-4926.2001.09.025
2001-01-01
Chinese Journal of Semiconductors
Abstract:Fault mechanism of available critical area model is studied.An improved fault-kernel of open/short defect is presen- ted, which is suitable for the critical area calculation of general VLSI layout structure.It is important to the calculation of VLSI critical area and the optimization of IC layout design.
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