Abstract:The thin-film growth has been confirmed to be assembled by an enormous number of clusters in experiments of CVD. Sequence of clusters’ depositions proceeds to form the thin-film in short time as gas fluids through surface of substrate. Such growth mechanism has been mainly investigated on the basis of experiment. Due to immense cost of the experimental equipment and low level of current measurement technology, the comprehension about authentic effect of formation condition on properties of nanomaterial is limited in qualitative manner. Three quantitative items: flatness of primary deposition, adhesion between cluster and substrate, and degree of epitaxial growth were proposed to evaluate the property of thin-film. In this simulation, three different cluster sizes of 203, 653, and 1563 atoms with different velocities (0, 10, 100, 1000, and 3000m/s) were deposited on a Cu(001) substrate whose temperatures were set between 300 and 1000K. Four clusters and one cluster were used in primary deposition and secondary deposition, respectively. To increase initial velocity not only enhanced the speed of epitaxial growth, adhesion between clusters and substrate, but also increased the degree of epitaxy for primary deposition and secondary deposition. Exfoliation pattern of thin-film was profoundly dependent on initial velocity through comparison between adhesion of primary and secondary deposition. Moreover, the epitaxial growth became well as the temperature of substrate was raised, and the degree of epitaxy of small cluster was larger than that of larger cluster, no matter of primary and secondary deposition.

Cluster Nucleation Limited by Growth Pattern Coverage in Thin Film Preparation from Vapor

INFLUENCE OF COVERAGE ON NUCLEATION AND GROWTH OF THIN FILMS

Initial Growth of Thin Films with Low Nucleus Density and Linear Lateral Growth Rate on A Substrate Surface

Nucleation of Thin Films on Uncoverage Parts of Substrate

SIMULATION ON MULTIPLE CLUSTER GROWTH IN ULTRA-THIN FILMS

Theoretical Study on Thin-Film Formation by Parallel Molecular Dynamics Simulation

A Computer Simulation of Nucleation and Growth of Thin Films

Quantitative Evaluation about Property of Thin-Film Formation

Molecular Dynamics Simulation about Porous Thin-Film Growth in Secondary Deposition

Growth mechanism of cluster-assembled surfaces: from sub-monolayer to thin film regime

Theoretical investigation about secondary deposition of thin-film formation by molecular dynamics simulation

Step-confined Thin Film Growth Via Near-Surface Atom Migration

A Kinetic Model for the Initial Growth of Diamond Films

Nucleation Site Distribution Probed by Phase-Enhanced Environmental Scanning Electron Microscopy

Parallel molecular dynamics simulation on thin-film formation process

On the Dynamics of Nanostructures Formation during Thin Film Growth.

Rethinking The Application Of The First Nucleation Theorem To Particle Formation

The Effect of Lattice Mismatch on the Nucleation Process of Heteroepitaxial Growth of Ultrathin Film

Growth kinetic processes of AlN molecules on the Al-polar surface of AlN.

Kinetic Monte Carlo simulation of nucleation at the initial stage of thin film growth

Phase Diagram of Interfacial Growth Modes by Vapor Deposition and Its Application for ZnO Nanostructures