Abstract:In this study, the process of surface morphology control was researched by combining the computation fluid dynamics (CFD) simulations and physical vapor transport (PVT) growth experiments. The results indicate the essentiality of preserving the surface structure of SiC substrate with macroscopic steps at the initial stage of the heterogeneous PVT growth. We identified an optimal range of growth temperature (Tg) and pressure to maintain the active Al vapor below a critical threshold. In the subsequent process, the pivotal factor for controlling the surface morphology of the AlN layer is identified as the supersaturation near the growing surface. Excessive supersaturation leads to a transition from a 2D to a 3D growth mode, resulting in a shift from a smooth to a rough surface morphology. An appropriate level of supersaturation can be achieved by carefully controlling the Tg, striking a balance between high surface quality and growth rate. Herein, we proposed a two-step PVT method for cultivating high-surface-quality AlN crystals on SiC substrates. At the first stage, the Tg is maintained below a threshold corresponding to the critical Al vapor pressure to preserve the surface structure until the SiC surface is completely covered by AlN. Then, Tg is elevated to near transition temperature (Ttran) to continue AlN single crystal growth at a proper rate for a long time, where Ttran is defined as the growth temperature at which the transition of the dominant mode from step growth to 3D growth happens. Two-inch-diameter AlN single crystals of thicknesses of nearly 1 mm with a smooth and lustrous surface have been obtained on SiC substrate by the two-step method.

Growth kinetic processes of AlN molecules on the Al-polar surface of AlN.

Atomic Simulation of Homoepitaxial AlN on Non-Polar (11-20) Plane

Growth of Spontaneous Nucleation AlN Crystals by Al-Base Alloy Evaporation in Nitrogen Atmosphere

Gas-Phase Chemical Reaction Mechanism in the Growth of AlN during High-Temperature MOCVD: A Thermodynamic Study

A Thermal Transport And Non-Equilibrium Deposition Model In Aln Sublimation Growth Process

Surface Morphology of AlN Nucleation Layer Grown on Si by MOCVD

Surface Control of AlN Single Crystal Growth on SiC Substrate

Low temperature growth of c-axis oriented AlN films on γ-LiAlO2 by radio frequency magnetron sputtering

Numerical Simulation Study on Chemical Reaction-transport Process of AlN MOCVD Growth

Seeded Growth of AlN on N- and Al-polar AlN Seeds by Physical Vapor Transport

MOVPE growth of nitrogen- and aluminum-polar AlN on 4H-SiC

Seeded Growth of AlN Crystals on Nonpolar Seeds Via Physical Vapor Transport

MBE Growth of AlN Nanowires on Si Substrates by Aluminizing Nucleation

Toward homogenous AlN via reaction of Al nanoparticles with N 2 and NH 3 : Reactive molecular dynamics simulation

Phase-equilibrium-dominated Vapor-Liquid-solid Growth Mechanism.

Influence of the Nucleation Layer Morphology on the Structural Property of AlN Films Grown on C-Plane Sapphire by MOCVD

Miscut dependent surface evolution in the process of N-polar GaN$(000\bar 1)$ growth under N-rich condition

Growth of AlN Nanobelts, Nanorings and Branched Nanostructures

Formation of aluminum nitride clusters by cyclic vapor–solid process

Morphology Evolution, Growth Mechanism and Optical Properties of AlN Nanostructures

Controllable growth of hierarchical AlN nanostructures based on dynamic equilibrium