Abstract:As process technologies advance into deep sub-micrometer and nanometer scale, the charged device model (CDM) is now considered an important stress model for defining electrostatic discharge (ESD) reliability of integrated circuits. Thus the turn-on time of the ESD elements used in the protection circuit becomes important. At this time, there is no good method to evaluate the CDM ESD device turn-on speed. Equipment like VF-TLP and CC-TLP are too complicated and not precise for this purpose. A new method to evaluate the ESD device turn-on speed is presented in this paper. Based on this novel approach, some CDM ESD devices are analyzed based on the transmission line pulsing (TLP) tester. The designed devices include diodes, grounded-gate NMOS, SCRpsilas (silicon controlled rectifier), and Modified-Lateral SCRpsilas (MLSCR). The rising time of the pulse is set at 200 psec to accurately simulate real CDM pulses. The time-dependent voltage and current data are extracted and calculated from each pulse in the Time Domain Reflection (TDR) TLP tester. Two new ESD turn-on conditions are proposed and defined based on the transient currents in order to compare the relative speed of different ESD devices. The results show that the normalized turn-on time of different devices with various sizes and finger numbers do not correlate well with that obtained under the normal DC conditions, and the same device shows different turn-on characteristics under different pulses. These results enable devices to be designed for improved CDM ESD protection levels, and the present method can be used for ESD design for future nanometer technologies.

Role of the Pulse Repetition Rate when Assessing Electromagnetic Immunity of Electronic Devices

One of ways to choose UWB pulse repetition rate for assessment of the electronic devices immunity

Methodical Approach for Immunity Assessment of Electronic Devices Excited by High Power EMP

Electro-Thermo-Mechanical Characterizations of Various Wire Bonding Interconnects Illuminated by an Electromagnetic Pulse

Analysis of the Interference Effects in CMOS Image Sensors Caused by Strong Electromagnetic Pulses

Loading Effect of Eut on Maximal Electric Field Level in A Reverberation Chamber for Immunity Test

Review of Near-Field EMI Measurement

Electromagnetic Susceptibility Analysis In Device Level With Numerical Technique Based On Electric Field Integral Equation

Pulse Current Injection Platform with Consecutive Early-Time and Intermediate-Time High-Altitude Electromagnetic Pulse Conducted Currents for Immunity Test of Electrical Equipment.

Strong Electromagnetic Pulse Interference Loading Method on Electrical Equipment under Operation State

Investigation of Turn-on Speeds of Electrostatic Discharge Protection Devices Using Transmission-Line Pulsing Technique

Application of Integrated Transmission Line Modeling and Behavioural Modeling on Electromagnetic Immunity Synthesis

A review of intentional electromagnetic interference in power electronics: Conducted and radiated susceptibility

System-level Conducted Electromagnetic Immunity Modelling Method

General Voltage Injection Device for Immunity Test of Active Implantable Neurostimulators to Electromagnetic Fields over the Frequency Range 16.6hz to 80Mhz

Behavioral Modeling for Electromagnetic Immunity Analysis for Electronic Systems

An EM Imaging Method Based on Plane-Wave Spectrum and Transmission Line Model

Study of measurement techniques for strong pulsed electric field

Electromagnetic Sensitivity Analysis of Radio Frequency Front-End Module in Wireless Intelligent Sensors Subjected to Nanosecond Electromagnetic Pulse

Dependence of Reversible and Irreversible Failures of Semiconductor Devices on the Repetition Rate of Powerful Pulse Electromagnetic Interferences

Test Methods for Performance of Protective Devices Excited by Conducted Transient Electromagnetic Disturbance