A Study on the Frequency-Domain Black-Box Modeling Method for the Nonlinear Behavioral Level Conduction Immunity of Integrated Circuits Based on X-Parameter Theory
Xi Chen,Shuguo Xie,Mengyuan Wei,Yan Yang
DOI: https://doi.org/10.3390/mi15050658
IF: 3.4
2024-05-18
Micromachines
Abstract:During circuit conduction immunity simulation assessments, the existing black-box modeling methods for chips generally involve the use of time-domain-based modeling methods or ICIM-CI binary decision models, which can provide approximate immunity assessments but require a high number of tests to be performed when carrying out broadband immunity assessments, as well as having a long modeling time and demonstrating poor reproducibility and insufficient accuracy in capturing the complex electromagnetic response in the frequency domain. To address these issues, in this paper, we propose a novel frequency-domain broadband model (Sensi-Freq-Model) of IC conduction susceptibility that accurately quantifies the conduction immunity of components in the frequency domain and builds a model of the IC based on the quantized data. The method provides high fitting accuracy in the frequency domain, which significantly improves the accuracy of circuit broadband design. The generated model retains as much information within the frequency-domain broadband as possible and reduces the need to rebuild the model under changing electromagnetic environments, thereby enhancing the portability and repeatability of the model. The ability to reduce the modeling time of the chip greatly improves modeling efficiency and circuit design. The results of this study show that the "Sensi-Freq-Model" reduces the broadband modeling time by about 90% compared to the traditional ICIM-CI method and improves the normalized mean square error (NMSE) by 18.5 dB.
nanoscience & nanotechnology,instruments & instrumentation,physics, applied,chemistry, analytical