Abstract:In this paper, a high-resistivity silicon (HR-Si) interposer integrated with through-silicon via (TSV) electrically grounded coplanar waveguide (CPW) line is presented for 2.5-D/3-D heterogeneous integration of radio frequency (RF) microelectronics devices. In addition, design of TSV interconnection composed of two coaxial ladder-hollow-annular Cu (copper) TSVs of different diameters is utilized to maintain a sufficient freedom for strict standard cleaning to avoid Si resistivity degradation. The formation of the coaxial ladder TSV structure is more beneficial to the subsequent plating process because it reduces the aspect ratio of TSV vias. Hollow-annular Cu TSV is manufactured in order to reduce the problem of mismatch in coefficient of thermal expansion among TSV's constituent materials. A layer of Au (aurum) film is utilized to passivate the exposed Cu surface of Si interposer. Au is widely used in III-V groups' devices because of the good compatibility with photonic integrated circuits, conductivity, and corrosion resistance. HR-Si interposer with TSV grounded CPW line and test structure is fabricated and characterized. With the monitoring test results, it can be found that it changes little in the resistivity of Si substrate, though the whole process, which is a basic requirement for RF performance. RF property test results show that the insertion loss is about -0.20 dB/mm at 10 GHz for the presented TSV grounded CPW line and -0.02 dB per TSV. These test results are better than the traditional design. To verify its applicability to 2.5-D/3-D heterogeneous integration, RF microelectronics die is assembled on TSV interposer and tested, and the test results prove that it works properly.

Design and Experimentally Verification of a Vertical Coaxial Transmission Structure in High resistivity Si Interposer

Transmission Characteristics Of A Coaxial Through-Silicon Via (C-Tsv) Interconnect

A Compact 2-18Ghz Ultra-Wideband Frequency-conversion T/R Module Based on a 3D Heterogeneous Integrated Process

Electromagnetic Compatibility-Oriented Study on Through Silicon Single-Walled Carbon Nanotube Bundle Via (TS-SWCNTBV) Arrays

Coaxial Through-Silicon-Vias Using Low-κ SiO2 Insulator

Frequency- and temperature-dependent modeling of coaxial through-silicon vias for 3-D ICs

A Novel Dieletric Slot Stripline Structure for Millimeter Wave Flexible Printed Circuit

Design And Fabrication Of 3d Interconnected Transmission Structure Based On Tsv

A RF Redundant TSV Interconnection for High Resistance Si Interposer

Fabrication and RF Property Evaluation of High-Resistivity Si Interposer for 2.5-D/3-D Heterogeneous Integration of RF Devices

Transmission Structures Using Parylene C and TSV for Silicon-based Low-loss and Low-profile Heterogeneous Integrations at Ka-band

Design, Fabrication, and Radio Frequency Property Evaluation of a Through-Glass-via Interposer for 2.5D Radio Frequency Integration

Design, process, and electrical verification of HR-Si interposer for 3D heterogeneous RF integration

Low-loss Through Silicon Vias (tsvs) and Transmission Lines for 3D Optoelectronic Integration

Modeling and Analysis of Wide Frequency Band Coaxial TSV Transmission Interconnect

Double-Shielded Interposer with Highly Doped Layers for High-Speed Signal Propagation

A Design And Fabrication Of Transmission Line For Esifo In Millimeter-Wave Applications

Modeling of the RF Coaxial TSV Configuration Inside the Silicon Interposer with Embedded Cooling Cavity

Design of Compact and Low-Emi Waveguide Structures Based on Through Glass Vias

Investigation of CMOS On-Chip Transmission Lines CPW, SCPW and CPWG Up to 110Ghz

Electrical Characterization of RF TSV for 3D Multi-Core and Heterogeneous ICs