Abstract:The only nonsuperconducting rhenium–silicon binary compound, ReSi1.75, was heavily p-doped with Ga and Al into ReGaSi and ReAlSi in an attempt to evoke superconductivity. They were synthesized and their crystal structures were studied by both X-ray and neutron diffraction. Si and Ga/Al atoms are ordered into alternating layers, which was rationalized with the "coloring problem" study via first-principles calculations. ReGaSi cannot be further p-doped with more Ga, but ReAlSi can be doped with more Al to ReAl1.2Si0.8, in which Si and Al atoms are not ordered but randomly distributed on the same sites. The superconductivity measurements over these compounds demonstrate that the ordered ReAlSi and ReGaSi are not bulk superconductors. However, ReAl1.2Si0.8 becomes bulk superconductor with Tc = ∼3.5 K, which has been confirmed by magnetism, resistivity, and specific heat measurements.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acs.inorgchem.0c02578?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acs.inorgchem.0c02578</a>.Detailed results of the computational "coloring problem" study, the density of states of ReAlSi and ReAl1.25Si0.75, powder XRD patterns of Al-richer samples, the electrical resistivity of ReGaSi, and magnetic measurements of ReAlSi and ReAl1.2Si0.8 (<a class="ext-link" href="/doi/suppl/10.1021/acs.inorgchem.0c02578/suppl_file/ic0c02578_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

Electrical properties and phase changes in Ru2Si3 and Re4Si7

Anisotropic Spectroscopy and Electrical Properties of 2D ReS2(1–x)Se2x Alloys with Distorted 1T Structure

Electronic Structure, Bonding Character, and Thermoelectric Properties of Semiconducting Rhenium Silicide with Doping

Existence of Electron and Hole Pockets and Partial Gap Opening in the Correlated Semimetal Ca3Ru2O7

Magnetic, Electrical Transport, and Thermoelectric Properties of Sr4ru3o10: Evidence for A Field-Induced Electronic Phase Transition at Low Temperatures

Effects of Alloying Elements on Thermoelectric Properties of ReSi 1.75

The Effects of Key Elements Re and Ru on the Phase Morphologies and Microstructure in Ni-based Single Crystal Superalloys

Electronic Tuning in URu2Si2 Through Ru to Pt Chemical Substitution

Phase transformation of /spl beta/-FeSi/sub 2/-based alloys under in-situ high-temperature and high-pressure X-ray diffraction measurements

Phase Transformation in Co-, Mn-, and Al-doped Iron Disilicide Alloys

Reversible Thermally Driven Phase Change of Layered In2Se3 for Integrated Photonics.

Structural Variation and Electrical Properties of Amorphous Silicon Ruthenium Thin Films Embedded with Nanocrystals

Pressure-Induced Superconducting and Topological Phase Transitions in the RuX2 (X=P, As, Sb) Family Compounds

Structure Stability and Electronic Structure of Semiconducting Rhenium Silicide with Doping

Crystal Structures, Superconducting Properties, and the Coloring Problem in ReAlSi and ReGaSi

Phase Transformation Of Beta-Fesi2-Based Alloys Under In-Situ High-Temperature And High-Pressure X-Ray Diffraction Measurements

High Thermoelectric and Reversible P-N-p Conduction Type Switching Integrated in Dimetal Chalcogenide.

Anisotropy of Mobility Ratio Between Electron and Hole along Different Orientations in Regexsi1.75-X Thermoelectric Single Crystals

Prediction of Stable Ruthenium Silicides from First-Principles Calculations: Stoichiometries, Crystal Structures, and Physical Properties

Exploring the Electronic, Mechanical, Anisotropic, and Optical Properties of Ternary Silicides TM 2 Si 2 Ys ( TM = Cu, Ir, Os, Pt, Pd, Rh, Ru) from a First Principles Investigations

Electronic properties, stability, and lattice thermal conductivity of bulk Janus 3R-PtXY (X, Y=S, Se, Te) transition-metal dichalcogenide