Abstract:Discover how innovative heterogeneous hybrid hole transport layers (He‐HHTLs) using low‐cost, dopant‐free poly(3,4‐ethylenedioxythiophene):polystyrene sulphonate (PEDOT:PSS) and heterogeneous tunnel oxides (HeTOs) like SiOx/TiOx and SiOx/AlOx are revolutionizing silicon solar cells. This study reveals that HeTOs dramatically enhance passivation and carrier selectivity, eventually demonstrating potential for record‐breaking efficiencies of up to 23.1%. Unlock the secrets behind higher carrier lifetimes, reduced recombination velocities, and superior surface band bending in the He‐HHTLs for cutting‐edge solar power technology. Hybrid hole transport layers (HHTLs) consisting of‐a low‐cost, low‐temperature, dopant‐free, organic, hole‐selective poly(3,4‐ethylenedioxythiophene):polystyrene sulphonate (PEDOT:PSS) and an inorganic homogenous tunnel oxides (HoTOs), such as SiOx, TiOx, and AlOx have allowed significant improvements in carrier selectivity as well as in power and cost efficiency. These key parameters can be further improved by introducing heterogeneous tunnel oxides (HeTOs), formed of two different inorganic oxides. This work examines the potential of heterogeneous HHTLs and their impact on passivation as well as on the interfacial properties in silicon solar cells. HeTOs of SiOx/TiOx and SiOx/AlOx with negative fixed charge are studied and optimized. A heterogeneous HHTL with AlOx (>1.5 nm) resulted in a high lifetime (1.2 ms), low surface recombination velocity, and improved surface band bending at the interface due to the presence of higher negative fixed charge (1012 cm−2) within these layers. The passivation properties further improved on light soaking and annealing due to oxidation of PSS and AlOx/SiOx. Overall, these HHTLs demonstrated a hole selectivity (S10) of 12.5 and very high efficiencies up to of 26.1%, surpassing homogenous‐SiOx/PEDOT:PSS by 1.4%.

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