Highly Stable Two-Dimensional Gold Selenide with Large In-Plane Anisotropy and Ultrahigh Carrier Mobility

Cheng Tang,Lei Zhang,Chunmei Zhang,Jennifer MacLeod,Kostya (Ken) Ostrikov,Aijun Du

DOI: https://doi.org/10.1039/c9nh00586b

2020-01-01

Nanoscale Horizons

Abstract:Two separated Au channels for remarkably anisotropic transport and distribution of electrons and holes in 2D AuSe nanosheets for advanced polarization-sensitive optoelectronics.

What problem does this paper attempt to address?

High Mobility 2D Palladium Diselenide Field-Effect Transistors with Tunable Ambipolar Characteristics.

Wai Leong Chow,Peng Yu,Fucai Liu,Jinhua Hong,Xingli Wang,Qingsheng Zeng,Chuang-Han Hsu,Chao Zhu,Jiadong Zhou,Xiaowei Wang,Juan Xia,Jiaxu Yan,Yu Chen,Di Wu,Ting Yu,Zexiang Shen,Hsin Lin,Chuanhong Jin,Beng Kang Tay,Zheng Liu

DOI: https://doi.org/10.1002/adma.201602969

IF: 29.4

2017-01-01

Advanced Materials

Abstract:Due to the intriguing optical and electronic properties, 2D materials have attracted a lot of interest for the electronic and optoelectronic applications. Identifying new promising 2D materials will be rewarding toward the development of next generation 2D electronics. Here, palladium diselenide (PdSe2), a noble-transition metal dichalcogenide (TMDC), is introduced as a promising high mobility 2D material into the fast growing 2D community. Field-effect transistors (FETs) based on ultrathin PdSe2 show intrinsic ambipolar characteristic. The polarity of the FET can be tuned. After vacuum annealing, the authors find PdSe2 to exhibit electron-dominated transport with high mobility (mu(e(max)) = 216 cm(2) V-1 s(-1)) and on/off ratio up to 10(3). Hole-dominated-transport PdSe2 can be obtained by molecular doping using F-4-TCNQ. This pioneer work on PdSe2 will spark interests in the less explored regime of noble-TMDCs.
Bi2OS2: a Direct-Gap Two-Dimensional Semiconductor with High Carrier Mobility and Surface Electron States

Xiwen Zhang,Bing Wang,Xianghong Niu,Yunhai Li,Yunfei Chen,Jinlan Wang

DOI: https://doi.org/10.1039/c8mh01001c

IF: 13.3

2018-01-01

Materials Horizons

Abstract:Bi2OS2 nanosheets possess tunable anomalous layer-dependent bandgaps, derived from the synergetic effect of the quantum confinement and surface electron states.
Quasi one-dimensional van der Waals gold selenide with strong interchain interaction and giant magnetoresistance

Jingli Wang,Jingsi Qiao,Kang Xu,Jiewei Chen,Yuda Zhao,Bocheng Qiu,Ziyuan Lin,Wei Ji,Yang Chai

DOI: https://doi.org/10.1016/j.scib.2020.05.008

IF: 18.9

2020-09-01

Science Bulletin

Abstract:The atomic structure of quasi one-dimensional (1D) van der Waals materials can be regarded as the stacking of atomic chains to form thin flakes or nanoribbons, which substantially differentiates them from typical two-dimensional (2D) layered materials and 1D nanotube/nanowire array. Here we present our studies on quasi 1D gold selenide (AuSe) that possesses highly anisotropic crystal structure, excellent electrical conductivity, giant magnetoresistance, and unusual reentrant metallic behavior. The low in-plane symmetry of AuSe gives rise to its high anisotropy of vibrational behavior. In contrast, quasi 1D AuSe exhibits high in-plane electrical conductivity along the directions of both atomic chains and perpendicular one, which can be understood as a result of strong interchain interaction. We found that AuSe exhibits a near quadratic nonsaturating giant magnetoresistance of 1841% with the magnetic field perpendicular to its in-plane. We also observe unusual reentrant metallic behavior, which is caused by the carrier mismatch in the multiband transport. Our works help to establish fundamental understandings on quasi 1D van der Waals semimetallic AuSe and identify it as a new candidate for exploring giant magnetoresistance and compensated semimetals.

multidisciplinary sciences
2D Materials: Two‐Dimensional Palladium Diselenide with Strong In‐Plane Optical Anisotropy and High Mobility Grown by Chemical Vapor Deposition (adv. Mater. 19/2020)

Yiyi Gu,Hui Cai,Jichen Dong,Yiling Yu,Anna N. Hoffman,Chenze Liu,Akinola D. Oyedele,Yu‐Chuan Lin,Zhuozhi Ge,Alexander A. Puretzky,Gerd Duscher,Matthew F. Chisholm,Philip D. Rack,Christopher M. Rouleau,Zheng Gai,Xiangmin Meng,Feng Ding,David B. Geohegan,Kai Xiao

DOI: https://doi.org/10.1002/adma.202070152

IF: 29.4

2020-01-01

Advanced Materials

Abstract:In article number 1906238, Kai Xiao and co-workers develop a novel chemical vapor deposition method to successfully synthesize a pentagonal 2D material, PdSe2, which exhibits strong optical anisotropy and high carrier mobility. The growth of high-quality, anisotropic 2D crystals is essential for the rapid exploration and development of electronic devices with unique optoelectronic properties.
Coplanar High Mobility and Interplanar Van Der Waals Heterojunction in Layered Two-Dimensional Bi2O2Se Nanosheets

Qifeng Cai,Congwei Tan,Jingyue Wang,Teng Tu,Shuang Sun,Xiaokang Li,Baotong Zhang,Haixia Li,Xiaoyan Xu,Xia An,Xing Zhang,Ru Huang,Hailin Peng,Ming He,Ming Li

DOI: https://doi.org/10.1109/led.2021.3073418

IF: 4.8157

2021-06-01

IEEE Electron Device Letters

Abstract:In this letter, the electronic transport features of layered two-dimensional (2D) Bi2 O2 Se semiconductor nanosheets are characterized along the in-plane and the out-of-plane directions, respectively. The modulation of double gate is manufactured on a 26.4 nm CVD-grown Bi2 O2 Se-nanosheet MOSFET, thus executing the highest in-plane field-effect mobility of ~296 cm2 V−1s−1 at room temperature. Furthermore, the rectification behavior of charge transport across the perpendicular interlayer of Bi2 O2 Se nanosheet is distinctly scrutinized. Correspondingly, the existing of potential barrier between the [Bi2 O2] ${}^{2n+}$ and [Se] ${}^{2n-}$ interlayers of Bi2 O2 Se nanosheets is validated by the temperature-dependent current measurement and the Poole-Frenkel model. This work offers promising routes to implement high-efficient field-effect transports parallel to the in-plane direction, as well as tunable heterojunction transports across the perpendicular interlayer of 2D Bi2 O2 Se nanosheets.

engineering, electrical & electronic
Giant anisotropic photogalvanic effect in a flexible AsSb monolayer with ultrahigh carrier mobility.

Pei Zhao,Jianwei Li,Wei Wei,Qilong Sun,Hao Jin,Baibiao Huang,Ying Dai

DOI: https://doi.org/10.1039/c7cp05201d

IF: 3.3

2017-01-01

Physical Chemistry Chemical Physics

Abstract:Searching for novel two-dimensional (2D) materials with desirable properties is of great significance for the design of next generation nano-devices. In this work, we address the electronic and optoelectronic properties of monolayer AsSb on the basis of density functional theory (DFT) combined with quantum transport simulations. We find three stable phases of monolayer AsSb, that is, the alpha , gamma and epsilon phases, and all of them show direct bandgaps, which are beneficial in increasing the transition probability of photon-generated electrons and improving the efficiency of photoelectric conversion. In addition, these systems could attain meaningful strain-induced band engineering and a phase transition from semiconductor to metal occurs. It is highly interesting that the monolayer AsSb has an ultrahigh carrier mobility (similar to 10(4) cm(2) V(-1 )s(-1)), which is evidently larger than most of the reported 2D materials. In light of the non-equilibrium Green's function formalism, a linear photogalvanic effect (PGE) is observed along both the zigzag and armchair directions, suggesting that monolayer AsSb exhibits excellent photoresponse in a broad spectrum ranging from ultraviolet to infrared light, which is favorable for serving as a potential outstanding photovoltaic material. Our results highlight that these monolayer AsSb are promising candidates for future applications in electronics and optoelectronics.
Metallic and Highly Conducting Two-Dimensional Atomic Arrays of Sulfur Enabled by Molybdenum Disulfide Nanotemplate

Shuze Zhu,Xiumei Geng,Yang Han,Mourad Benamara,Liao Chen,Jingxiao Li,Ismail Bilgin,Hongli Zhu

DOI: https://doi.org/10.1038/s41524-017-0041-z

IF: 12.256

2017-01-01

npj Computational Materials

Abstract:Element sulfur in nature is an insulating solid. While it has been tested that one-dimensional sulfur chain is metallic and conducting, the investigation on two-dimensional sulfur remains elusive. We report that molybdenum disulfide layers are able to serve as the nanotemplate to facilitate the formation of two-dimensional sulfur. Density functional theory calculations suggest that confined in-between layers of molybdenum disulfide, sulfur atoms are able to form two-dimensional triangular arrays that are highly metallic. As a result, these arrays contribute to the high conductivity and metallic phase of the hybrid structures of molybdenum disulfide layers and two-dimensional sulfur arrays. The experimentally measured conductivity of such hybrid structures reaches up to 223 S/m. Multiple experimental results, including X-ray photoelectron spectroscopy (XPS), transition electron microscope (TEM), selected area electron diffraction (SAED), agree with the computational insights. Due to the excellent conductivity, the current density is linearly proportional to the scan rate until 30,000 mV s −1 without the attendance of conductive additives. Using such hybrid structures as electrode, the two-electrode supercapacitor cells yield a power density of 10 6 Wh kg −1 and energy density ~47.5 Wh kg −1 in ionic liquid electrolytes. Our findings offer new insights into using two-dimensional materials and their Van der Waals heterostructures as nanotemplates to pattern foreign atoms for unprecedented material properties.
Coplanar High Mobility and Interplanar Van Der Waals Heterojunction in Layered Two-Dimensional Bi₂O₂Se Nanosheets

Qifeng Cai,Congwei Tan,Jingyue Wang,Teng Tu,Shuang Sun,Xiaokang Li,Baotong Zhang,Haixia Li,Xiaoyan Xu,Xia An,Xing Zhang,Ru Huang,Hailin Peng,Ming He,Ming Li

DOI: https://doi.org/10.1109/LED.2021.3073418

IF: 4.8157

2021-01-01

IEEE Electron Device Letters

Abstract:In this letter, the electronic transport features of layered two-dimensional (2D) Bi2 O2 Se semiconductor nanosheets are characterized along the in-plane and the out-of-plane directions, respectively. The modulation of double gate is manufactured on a 26.4 nm CVD-grown Bi2 O2 Se-nanosheet MOSFET, thus executing the highest in-plane field-effect mobility of ~296 cm2 V−1s−1 at room temperature. Furt...
Low Residual Carrier Concentration and High Mobility in 2D Semiconducting Bi2O2Se

Jinxiong Wu,Chenguang Qiu,Huixia Fu,Shulin Chen,Congcong Zhang,Zhipeng Dou,Congwei Tan,Teng Tu,Tianran Li,Yichi Zhang,Zhiyong Zhang,Lian-Mao Peng,Peng Gao,Binghai Yan,Hailin Peng

DOI: https://doi.org/10.1021/acs.nanolett.8b03696

IF: 10.8

2019-01-01

Nano Letters

Abstract:The air-stable and high-mobility two-dimensional (2D) Bi2O2Se semiconductor has emerged as a promising alternative that is complementary to graphene, MoS2, and black phosphorus for next-generation digital applications. However, the room-temperature residual charge carrier concentration of 2D Bi2O2Se nanoplates synthesized so far is as high as about 1019-1020 cm-3, which results in a poor electrostatic gate control and unsuitable threshold voltage, detrimental to the fabrication of high-performance low-power devices. Here, we first present a facile approach for synthesizing 2D Bi2O2Se single crystals with ultralow carrier concentration of ∼1016 cm-3 and high Hall mobility up to 410 cm2 V-1 s-1 simultaneously at room temperature. With optimized conditions, these high-mobility and low-carrier-concentration 2D Bi2O2Se nanoplates with domain sizes greater than 250 μm and thicknesses down to 4 layers (∼2.5 nm) were readily grown by using Se and Bi2O3 powders as coevaporation sources in a dual heating zone chemical vapor deposition (CVD) system. High-quality 2D Bi2O2Se crystals were fabricated into high-performance and low-power transistors, showing excellent current modulation of >106, robust current saturation, and low threshold voltage of -0.4 V. All these features suggest 2D Bi2O2Se as an alternative option for high-performance low-power digital applications.
Two-dimensional Haeckelite GeS with high carrier mobility and exotic polarization orders

Miao Cheng,Jie Guan

DOI: https://doi.org/10.1103/physrevmaterials.5.054005

IF: 3.98

2021-05-14

Physical Review Materials

Abstract:Two-dimensional (2D) group-IV monochalcogenides have raised the attention of the material science community owing to their rich physical properties and promising applications in 2D functional devices. Based on ab initio calculations, we explore three square/octagon Haeckelite structures as additional stable allotropes of 2D GeS. All the predicted allotropes are semiconducting with wide [2.5–2.7 eV at the Heyd-Scuseria-Ernzerhof exchange-correlation functional (HSE06) level] and tunable band gaps. Meanwhile, h1- and h2-GeS exhibit unusually high carrier mobilities up to 104cm2V−1s−1. Exotic electric polarization orders, including antiferroelectricity and noncollinear polarization with atomic-scale dipole vortices, are found in the predicted allotropes. All three Haeckelite allotropes can be connected to the corresponding hexagonal GeS allotropes laterally with an extremely low energy cost, which indicates the possibility for the coexistence of different phases and the formation of heterostructures in the same GeS layer.

materials science, multidisciplinary
Two‐Dimensional Palladium Diselenide with Strong In‐Plane Optical Anisotropy and High Mobility Grown by Chemical Vapor Deposition

Yiyi Gu,Hui Cai,Jichen Dong,Yiling Yu,Anna N. Hoffman,Chenze Liu,Akinola D. Oyedele,Yu‐Chuan Lin,Zhuozhi Ge,Alexander A. Puretzky,Gerd Duscher,Matthew F. Chisholm,Philip D. Rack,Christopher M. Rouleau,Zheng Gai,Xiangmin Meng,Feng Ding,David B. Geohegan,Kai Xiao

DOI: https://doi.org/10.1002/adma.201906238

IF: 29.4

2020-03-16

Advanced Materials

Abstract:Two‐dimensional (2D) palladium diselenide (PdSe2) has strong interlayer coupling and a puckered pentagonal structure, leading to remarkable layer‐dependent electronic structures and highly anisotropic in‐plane optical and electronic properties. However, the lack of high‐quality, 2D PdSe2 crystals grown by bottom‐up approaches limits the study of their exotic properties and practical applications. In this work, chemical vapor deposition growth of highly crystalline few‐layer (≥2 layers) PdSe2 crystals on various substrates is reported. The high quality of the PdSe2 crystals is confirmed by low‐frequency Raman spectroscopy, scanning transmission electron microscopy, and electrical characterization. In addition, strong in‐plane optical anisotropy is demonstrated via polarized Raman spectroscopy and second‐harmonic generation maps of the PdSe2 flakes. A theoretical model based on kinetic Wulff construction theory and density functional theory calculations is developed and described the observed evolution of "square‐like" shaped PdSe2 crystals into rhombus due to the higher nucleation barriers for stable attachment on the (1,1) and (1,−1) edges, which results in their slower growth rates. Few‐layer PdSe2 field‐effect transistors reveal tunable ambipolar charge carrier conduction with an electron mobility up to ≈294 cm2 V−1 s−1, which is comparable to that of exfoliated PdSe2, indicating the promise of this anisotropic 2D material for electronics.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Decorating InSe Surface by Gold Species for Improved Carrier Transport and Efficient Sunlight Harvesting Toward High‐Performance Flexible Photodetectors

Zhongjun Li,Hui Qiao,Fei Liu,Yang Zhou,Yuan Zhang,Yachao Wang,Feicui Xu,Guoyi Huang,Shiqin Yue,Wenlan Liu,Huafu Zhao,Hui Tan,Weiping Li,Jianqing Li,Xiang Qi,Zongyu Huang,S. Wageh,Ahmed A. Al-Ghamdi,Bing Wang,Han Zhang

DOI: https://doi.org/10.1002/adom.202201685

IF: 9

2022-01-01

Advanced Optical Materials

Abstract:Two-dimensional (2D) materials have aroused widespread interest due to the high potential in modern photoelectronics. The strategy for improving the stability of 2D materials in the air, reinforcing formation, and transport of photoexcited carriers would open up promising routes toward flexible facilities. In this paper, surface engineering is executed on 2D InSe by decorating Au species for a lower bandgap allowing for efficient sunlight harvesting and decreased barrier with the substrate for improved electron transport. Moreover, hot electrons produced by Au nanoparticles under light irradiation pour into InSe for boosting photocurrent. Au nanoparticles also serve as conducting bridges in InSe-Au photoanode, where the contact resistance is two orders of magnitude lower than that of InSe electrode. Compared with InSe and other 2D counterparts, InSe-Au flexible photoelectrochemical detectors behave with outstanding performances under sunlight irradiation, including responsibility 55.4 mu A W-1, detectivity 4.18 x 10(9) Jones. Importantly, the working electrode shows excellent ON/OFF switching stability after bending for 5000 times (3 months of storage in the air). This surface engineering provides a general strategy to tailor 2D materials for wearable photoelectronic devices in the future.
Two-Dimensional Semiconductors with High Intrinsic Carrier Mobility at Room Temperature

Chenmu Zhang,Ruoyu Wang,Himani Mishra,Yuanyue Liu

DOI: https://doi.org/10.1103/PhysRevLett.130.087001

2023-02-24

Abstract:Two-dimensional semiconductors have demonstrated great potential for next-generation electronics and optoelectronics, however, the current 2D semiconductors suffer from intrinsically low carrier mobility at room temperature, which significantly limits their applications. Here we discover a variety of new 2D semiconductors with mobility 1 order of magnitude higher than the current ones and even higher than bulk silicon. The discovery was made by developing effective descriptors for computational screening of the 2D materials database, followed by high-throughput accurate calculation of the mobility using a state-of-the-art first-principles method that includes quadrupole scattering. The exceptional mobilities are explained by several basic physical features; particularly, we find a new feature: carrier-lattice distance, which is easy to calculate and correlates well with mobility. Our Letter opens up new materials for high performance device performance and/or exotic physics, and improves the understanding of the carrier transport mechanism.
Controlled Growth of a Large-Size 2D Selenium Nanosheet and Its Electronic and Optoelectronic Applications

Jingkai Qin,Gang Qiu,Jie Jian,Hong Zhou,Lingming Yang,Adam Charnas,Dmitry Y Zemlyanov,Cheng-Yan Xu,Xianfan Xu,Wenzhuo Wu,Haiyan Wang,Peide D Ye

DOI: https://doi.org/10.1021/acsnano.7b04786

2017-11-03

Abstract:Selenium has attracted intensive attention as a promising material candidate for future optoelectronic applications. However, selenium has a strong tendency to grow into nanowire forms due to its anisotropic atomic structure, which has largely hindered the exploration of its potential applications. In this work, using a physical vapor deposition method, we have demonstrated the synthesis of large-size, high-quality 2D selenium nanosheets, the minimum thickness of which could be as thin as 5 nm. The Se nanosheet exhibits a strong in-plane anisotropic property, which is determined by angle-resolved Raman spectroscopy. Back-gating field-effect transistors based on a Se nanosheet exhibit p-type transport behaviors with on-state current density around 20 mA/mm at Vds = 3 V. Four-terminal field effect devices are also fabricated to evaluate the intrinsic hole mobility of the selenium nanosheet, and the value is determined to be 0.26 cm2 Vs at 300 K. The selenium nanosheet phototransistors show an excellent photoresponsivity of up to 263 A/W, with a rise time of 0.1 s and fall time of 0.12 s. These results suggest that crystal selenium as a 2D form of a 1D van der Waals solid opens up the possibility to explore device applications.

Materials Science,Mesoscale and Nanoscale Physics
Pentagonal two-dimensional noble-metal dichalcogenide PdSSe for photocatalytic water splitting with pronounced optical absorption and ultrahigh anisotropic carrier mobility

Feng Xiao,Wen Lei,Wei Wang,Lili Xu,Shengli Zhang,Xing Ming

DOI: https://doi.org/10.1039/d1tc01245b

IF: 6.4

2021-01-01

Journal of Materials Chemistry C

Abstract:Three stable bulk phase PdSSe materials have been successfully screened by CALYPSO combined with DFT calculations, and two polymorphs of 2D monolayer PdSSe can be exfoliated from them, exhibiting excellent optoelectronic properties.

materials science, multidisciplinary,physics, applied
Two-Dimensional N-Inse/P-Gese(Sns) Van Derwaals Heterojunctions: High Carrier Mobility And Broadband Performance

Congxin Xia,Juan Du,Xiaowei Huang,Wenbo Xiao,Wenqi Xiong,Tianxing Wang,Zhongming Wei,Yu Jia,Jun-jie Shi,Jingbo Li

DOI: https://doi.org/10.1103/PhysRevB.97.115416

IF: 3.7

2018-01-01

Physical Review B

Abstract:Recently, constructing van der Waals (vdW) heterojunctions by stacking different two-dimensional (2D) materials has been considered to be effective strategy to obtain the desired properties. Here, through first-principles calculations, we find theoretically that the 2D n-InSe/p-GeSe(SnS) vdW heterojunctions are the direct-band-gap semiconductor with typical type-II band alignment, facilitating the effective separation of photogenerated electron and hole pairs. Moreover, they possess the high optical absorption strength (similar to 10(5)), broad spectrum width, and excellent carrier mobility (similar to 10(3) cm(2) V-1 s(-1)). Interestingly, under the influences of the interlayer coupling and external electric field, the characteristics of type-II band alignment is robust, while the band-gap values and band offset are tunable. These results indicate that 2D n-InSe/p-GeSe(SnS) heterojunctions possess excellent optoelectronic and transport properties, and thus can become good candidates for next-generation optoelectronic nanodevices.
The Discovery of a High-Mobility Two-Dimensional Bismuth Oxyselenide Semiconductor and Its Application in Nonvolatile Neuromorphic Devices

Yuyu He,Qi Xu,Xinyue Dong,Junhao Liu,Li Li,Bing Wang,Jiabiao Chen,Lei Zhang,Zhansheng Gao,Wei Ai,Zhaochao Liu,Zhengyang Zhou,Weigao Xu,Huixia Fu,Feng Luo,Jinxiong Wu

DOI: https://doi.org/10.1021/acsnano.3c02263

IF: 17.1

2023-06-02

ACS Nano

Abstract:The development of two-dimensional (2D) electronics is always accompanied by the discovery of 2D semiconductors with high mobility and specific crystal structures, which may bring revolutionary breakthrough on proof-of-concept devices and physics. Here, Bi(3)O(2.5)Se(2), a 2D bismuth oxyselenide semiconductor with non-neutral layered crystal structure is discovered. Ultrathin Bi(3)O(2.5)Se(2) films are readily synthesized by chemical vapor deposition, displaying tunable band gaps and high...

materials science, multidisciplinary,chemistry, physical,nanoscience & nanotechnology
Electronic Properties and Carrier Dynamics at the Alloy Interfaces of WS 2 x Se 2−2 x Spiral Nanosheets

Jiangbo Peng,Dongcheng Yang,Caixia Ren,Ying Jiang,Xiaoli Zhu,Fangli Jing,Hailong Qiu,Hongjun Liu,Zhanggui Hu

DOI: https://doi.org/10.1002/adma.202107738

IF: 29.4

2022-02-04

Advanced Materials

Abstract:Electronic properties at the interfaces between different-composition domains of 2D-alloys are key for their optical, electronic, and optoelectronic applications. Understanding the interfacial electronic structures and carrier dynamics is essential for designing and fabricating devices that use these alloys. Here, WS2x Se2-2x spiral nanosheets are prepared using the physical vapor deposition method, and the nonlinear optical and electronic properties, as well as the carrier dynamics at the interfaces between the WS and WSe domains, are studied. Second-harmonic generation tests demonstrate that these nanosheets exhibit a very strong layer-dependent nonlinear optical effect. Atomic-resolution scanning tunneling microscopy (STM) and spectroscopy (STS) measurements reveal that S and Se atoms are non-uniformly distributed, forming WS domains, WSe domains, and defect-related areas. Atomic STM images and STS maps reveal enhanced local density of states by electron scattering at the WS/WSe interfaces, providing a detailed nanoscale interpretation of the S/Se-ratio-dependent lifetimes observed in pump-probe spectroscopy measurements. This work provides valuable interfacial characterization of 2D-alloy materials, using state-of-the-art methods with high temporal and spatial resolutions. The obtained insights are likely to be useful for prospective applications.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Highly Anisotropic Sb2Se3 Nanosheets: Gentle Exfoliation from the Bulk Precursors Possessing 1D Crystal Structure

Huaibing Song,Tiaoyang Li,Jia Zhang,Ying Zhou,Jiajun Luo,Chao Chen,Bo Yang,Cong Ge,Yanqing Wu,Jiang Tang

DOI: https://doi.org/10.1002/adma.201700441

IF: 29.4

2017-01-01

Advanced Materials

Abstract:2D materials, particularly those bearing in-plane anisotropic optical and electrical properties such as black phosphorus and ReS2 , have spurred great research interest very recently as promising building blocks for future electronics. However, current progress is limited to layered compounds that feature atomic arrangement asymmetry within the covalently bonded planes. Herein, a series of highly anisotropic nanosheets (Sb2 Se3 , Sb2 S3 , Bi2 S3 , and Sb2 (S, Se)3 ), which are composed of 1D covalently linked ribbons stacked together via van der Waals force, is introduced as a new member to the anisotropic 2D material family. These unique anisotropic nanosheets are successfully fabricated from their polymer-like bulk counterparts through a gentle water freezing-thawing approach. Angle-resolved polarized Raman spectroscopy characterization confirms the strong in-plane asymmetry of Sb2 Se3 nanosheets, and photodetection study reveals their high responsivity and anisotropic in-plane transport. This work can enlighten the synthesis and application of new anisotropic 2D nanosheets that can be potentially applied for future electronic and optoelectronic devices.

Highly Stable Two-Dimensional Gold Selenide with Large In-Plane Anisotropy and Ultrahigh Carrier Mobility

High Mobility 2D Palladium Diselenide Field-Effect Transistors with Tunable Ambipolar Characteristics.

Bi2OS2: a Direct-Gap Two-Dimensional Semiconductor with High Carrier Mobility and Surface Electron States

Quasi one-dimensional van der Waals gold selenide with strong interchain interaction and giant magnetoresistance

2D Materials: Two‐Dimensional Palladium Diselenide with Strong In‐Plane Optical Anisotropy and High Mobility Grown by Chemical Vapor Deposition (adv. Mater. 19/2020)

Coplanar High Mobility and Interplanar Van Der Waals Heterojunction in Layered Two-Dimensional Bi2O2Se Nanosheets

Giant anisotropic photogalvanic effect in a flexible AsSb monolayer with ultrahigh carrier mobility.

Metallic and Highly Conducting Two-Dimensional Atomic Arrays of Sulfur Enabled by Molybdenum Disulfide Nanotemplate

Coplanar High Mobility and Interplanar Van Der Waals Heterojunction in Layered Two-Dimensional Bi₂O₂Se Nanosheets

Low Residual Carrier Concentration and High Mobility in 2D Semiconducting Bi2O2Se

Two-dimensional Haeckelite GeS with high carrier mobility and exotic polarization orders

Two‐Dimensional Palladium Diselenide with Strong In‐Plane Optical Anisotropy and High Mobility Grown by Chemical Vapor Deposition

Decorating InSe Surface by Gold Species for Improved Carrier Transport and Efficient Sunlight Harvesting Toward High‐Performance Flexible Photodetectors

Two-Dimensional Semiconductors with High Intrinsic Carrier Mobility at Room Temperature

Controlled Growth of a Large-Size 2D Selenium Nanosheet and Its Electronic and Optoelectronic Applications

Pentagonal two-dimensional noble-metal dichalcogenide PdSSe for photocatalytic water splitting with pronounced optical absorption and ultrahigh anisotropic carrier mobility

Two-Dimensional N-Inse/P-Gese(Sns) Van Derwaals Heterojunctions: High Carrier Mobility And Broadband Performance

The Discovery of a High-Mobility Two-Dimensional Bismuth Oxyselenide Semiconductor and Its Application in Nonvolatile Neuromorphic Devices

Electronic Properties and Carrier Dynamics at the Alloy Interfaces of WS 2 x Se 2−2 x Spiral Nanosheets

Highly Anisotropic Sb2Se3 Nanosheets: Gentle Exfoliation from the Bulk Precursors Possessing 1D Crystal Structure