Controlled Growth of a Large-Size 2D Selenium Nanosheet and Its Electronic and Optoelectronic Applications

Jingkai Qin,Gang Qiu,Jie Jian,Hong Zhou,Lingming Yang,Adam Charnas,Dmitry Y Zemlyanov,Cheng-Yan Xu,Xianfan Xu,Wenzhuo Wu,Haiyan Wang,Peide D Ye

DOI: https://doi.org/10.1021/acsnano.7b04786

2017-11-03

Abstract:Selenium has attracted intensive attention as a promising material candidate for future optoelectronic applications. However, selenium has a strong tendency to grow into nanowire forms due to its anisotropic atomic structure, which has largely hindered the exploration of its potential applications. In this work, using a physical vapor deposition method, we have demonstrated the synthesis of large-size, high-quality 2D selenium nanosheets, the minimum thickness of which could be as thin as 5 nm. The Se nanosheet exhibits a strong in-plane anisotropic property, which is determined by angle-resolved Raman spectroscopy. Back-gating field-effect transistors based on a Se nanosheet exhibit p-type transport behaviors with on-state current density around 20 mA/mm at Vds = 3 V. Four-terminal field effect devices are also fabricated to evaluate the intrinsic hole mobility of the selenium nanosheet, and the value is determined to be 0.26 cm2 Vs at 300 K. The selenium nanosheet phototransistors show an excellent photoresponsivity of up to 263 A/W, with a rise time of 0.1 s and fall time of 0.12 s. These results suggest that crystal selenium as a 2D form of a 1D van der Waals solid opens up the possibility to explore device applications.

Materials Science,Mesoscale and Nanoscale Physics

What problem does this paper attempt to address?

The problem that this paper attempts to solve is that selenium (Se) materials tend to form one - dimensional nanowire structures during the growth process, which limits their potential applications in high - performance electronic and optoelectronic devices. Due to selenium's anisotropic atomic structure, it is easy to form one - dimensional structures such as nanowires, nanotubes and nanobelts. And these one - dimensional structures have a high ratio of edge to bulk phase, usually showing poor electrical transport properties, and as the size decreases, the electrical noise problem becomes more serious. Therefore, in order to expand the application of selenium in high - performance quantum - electronic and optoelectronic devices, researchers hope to be able to extend the selenium nanostructures to two - dimensional forms.

The paper successfully synthesized large - area, high - quality two - dimensional selenium nanosheets by the physical vapor deposition (PVD) method, with a minimum thickness of up to 5 nanometers. These selenium nanosheets show strong in - plane anisotropic properties. Field - effect transistors (FETs) based on selenium nanosheets show p - type transport behavior, and phototransistors exhibit an excellent photoresponsivity of up to 263 A/W. These results indicate that as the two - dimensional form of one - dimensional van der Waals solids, selenium nanosheets provide more possibilities for exploring device applications.