Abstract:Two dimensional ferroelectric materials are interesting for both fundamental properties and potential applications. Especially, Group IV monochalcogenides possess highest thermoelectric performance and intrinsic ferroelectric polarization properties and can sever as a model to explore ferroelectric polarization properties. However, due to the relatively large exfoliation energy, the creation of high-quality and large-size monolayer group IV monochalcogenides is not easy, which seriously hinders the integration of these materials into the fast-developing field of 2D materials and their heterostructures. Herein, monolayer GeS was successfully fabricated on Cu(111) substrate by molecular beam epitaxy method, and the lattice and electronic band structures of monolayer GeS were systematically characterized by high-resolution scanning tunneling microscopy, low-energy electron diffraction, in situ X-ray photoelectron spectroscopy, Raman spectra and angle-resolved photoelectron spectroscopy, and density functional theory calculations. All atomically resolved STM images reveal that the obtained monolayer GeS has an orthogonal lattice structure, which is consisted with theoretical prediction. Meanwhile, the distinct Moiré pattern formed between monolayer GeS and Cu(111) substrate also confirm the orthogonal lattice structure. In order to examine the chemical composition and valence state of as-prepared monolayer GeS, in situ XPS was utilized without air exposure. The measured XPS core levels spectra suggest the valence states of Ge and S elements are identified to be +2 and -2, respectively and the atomic ratio of Ge/S is 1:1.5, which is extremely close to the stoichiometry ratio of 1:1 for GeS. To further corroborate the quality and lattice structure of the monolayer GeS film, ex-situ Raman measurements are also performed for monolayer GeS on HOPG and multilayer graphene substrate. Three well-defined typical characteristic Raman peaks of GeS are observed. Finally, in situ ARPES measurement are conducted to determine the electronic band structure of monolayer GeS on Cu(111). The results demonstrate that the monolayer GeS has a nearly flat band electronic band structure, consistent with our DFT theoretical calculation. The realization and investigation of the monolayer GeS extend the scope of 2D ferroelectric materials and makes it possible to prepare high quality and large size monolayer group IV monochalcogenides, which is beneficial for the application of this main group material to the rapidly developing two-dimensional ferroelectric materials and heterojunction research.

Two-dimensional Haeckelite GeS with high carrier mobility and exotic polarization orders

Unexpected Band Gap Evolution and High Carrier Mobility Sparked by the Orbital Variation in Two-Dimensional GaGeX (X = S, Se, Te)

GeAs_2: A Ⅳ-Ⅴ Group 2D Semiconductor with Ultralow Thermal Conductivity and High Thermoelectric Efficiency

Tunable Ferroelectricity and Anisotropic Electric Transport in Monolayer Β-Gese

Highly modulated dual semimetal and semiconducting γ-GeSe with strain engineering

Excitons and Electron–Hole Liquid State in 2D Γ‐phase Group‐IV Monochalcogenides

Tunable Electronic Properties and Giant Spontaneous Polarization in Graphene/Monolayer GeS Van Der Waals Heterostructure

Controlling the Intrinsic Charge Carrier Properties of Two-Dimensional Monochalcogenides (GeSe)

Two-Dimensional Electron Gas at the Metastable Twisted Interfaces of Cdte/Pbte (111) Single Heterojunctions

Theoretical prediction of novel two-dimensional auxetic material SiGeS and study of its electronic and optical properties

GeAs2: A IV–V Group Two-Dimensional Semiconductor with Ultralow Thermal Conductivity and High Thermoelectric Efficiency

Two-Dimensional Auxetic GeSe2 Material with Ferroelasticity and Flexoelectricity

Unraveling electronic structure of GeS through ARPES and its correlation with anisotropic optical and transport behavior

γ-GeSe: A two-dimensional ferroelectric material with doping-induced ferromagnetism

Investigation of anisotropic mechanical, electronic, and charge carrier transport properties of germanium-pnictogen monolayers

New stable 2D and 3D GeC2 crystal structures predicted by first-principles study

Versatile van der Waals heterostructures of γ-GeSe with h-BN/graphene/MoS2

Atomic and electronic structure of monolayer ferroelectric GeS on Cu(111)

Noncollinear ferrielectricity and morphotropic phase boundary in monolayer GeS

Ultrahigh conductivity and non-trivial band structure in van der Waals Nb dichalcogenides with Ge intercalation

Two-Dimensional Si-Ge Monolayers: Stabilities, Structures and Electronic Properties