Ultrahigh conductivity and non-trivial band structure in van der Waals Nb dichalcogenides with Ge intercalation

Xue Han,Zhaolong Liu,Zhongnan Guo,Xiaojing Feng,Yan Gao,Shifeng Jin,Wenxia Yuan
DOI: https://doi.org/10.1039/d3qm00381g
IF: 8.6834
2023-06-04
Materials Chemistry Frontiers
Abstract:Chemical intercalation has great potential to realize exotic electrical properties in van der Waals materials. Here we report the Ge intercalation in layered Nb dichalcogenides NbX2 (X = Se and S), which can induce ultrahigh conductivity and novel transport properties. Using chemical vapor transport method, single crystals of two intercalated materials Ge0.33NbS2 and Ge0.26NbSe2 were grown. Despite the similar structures with edge-sharing NbX6 triangular prism, the intercalated Ge show different configurations in these two compounds, which is ordered in sulfide but disordered in selenide. The measurements on transport properties demonstrated that both Ge0.33NbS2 and Ge0.26NbSe2 are metallic and interestingly, the conductivity of Ge0.33NbS2 at 300 K reaches 6.83 × 104 S•cm-1, which is higher than other metallic transition metal dichalcogenides and even comparable to the electrode material Pt. Ge0.33NbS2 also shows high carrier mobility (83.40 cm2 V-1 s-1 at 300 K) and unsaturated linear magnetoresistance, while negative magnetoresistance was observed in Ge0.26NbSe2 below 10 K. The first-principles calculations indicated that the ultrahigh conductivity in Ge0.33NbS2 is ascribed to the non-trivial topological bands near the Fermi surface. Our work highlights the effective regulation of chemical intercalation on transport properties of van der Waals materials via modulating the band structures.
materials science, multidisciplinary,chemistry
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