Unexpected Band Gap Evolution and High Carrier Mobility Sparked by the Orbital Variation in Two-Dimensional GaGeX (X = S, Se, Te)
Lili Xu,Wenhan Zhou,Wenqiang Liu,Xinyan Xia,Gaoyu Liu,Tingting Guo,Ziyu Hu,Zhi Li,Shengli Zhang
DOI: https://doi.org/10.1016/j.physe.2021.115112
IF: 3.369
2021-01-01
Physica E Low-dimensional Systems and Nanostructures
Abstract:As elemental group material, germanium, enjoys a high status in the field of two-dimensional (2D) materials. However, 2D germanene is a gapless semiconductor, which greatly limits its application in optoelectronic devices. Herein, we found an interesting class of 2D materials, named GaGeX (X = S, Se, Te), consisting of two outer GaX layers and an inner germanene, a sandwich structure stacked together by interlayer Ga-Ge bonds. Compared with known 2D materials (such as MoX2), the band gaps gradually decrease in the order of sulfide, selenide, and telluride, the electronic calculations show that they have a unique band gaps reversely enlarging trend of 0.03, 0.46 and 0.72 eV from GaGeS to GaGeTe, respectively. Moreover, GaGeX is predicted to have superior mobility, especially with a hole mobility of up to 5510 cm(2) V-1 s(-1) in GaGeTe. These novel phenomena are found closely related to the orbital variation. Our findings render these 2D materials potential candidates for future optoelectronic devices.